MB3S datasheet, PDF - EEWORLD Datasheet

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MB3S: Description0.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size104KB，3 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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MB3S Overview

0.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

MB3S Parametric

Parameter Name	Attribute value
Number of terminals	4
Number of components	4
Minimum breakdown voltage	800 V
Maximum average input current	0.5000 A
Processing package description	Plastic, MBS-1, 4 PIN
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	tin lead
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	Bridge, 4 ELEMENTS
Diode component materials	silicon
Diode type	bridge rectifier diode
Phase	1
Maximum repetitive peak reverse voltage	800 V
Maximum non-repetitive peak forward current	35 A

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MB1S - MB8S

1 :

2 :

0.106(2.7)

0.09(2.3)

0.118(3.0)

MAX

Features

•

Low leakage

Surge overload rating:

35 amperes peak.

Ideal for printed circuit board.

––

3 :

0.008(0.2)

4 : ––

0.275(7)MAX

0.067(1.7)

0.057(1.3)

0.051(1.3)

0.035(0.9)

0.165(4.2)

0.150(3.8)

0.067(1.7)

0.057(1.3)

C0.02(0.5)

SOIC-4

Polarity symbols molded

or marking on body

0.031(0.8)

0.0191(0.5)

0.106(2.7)

0.09(2.3)

0.193(4.9)

0.177(4.5)

0.014(0.35)

0.006(0.15)

0.043(1.1)

0.027(0.7)

Dimensions are in:

inches (mm)

0.5 Ampere Glass Passivated Bridge Rectifiers

Absolute Maximum Ratings*

Symbol

f(surge)

qJA

qJL

stg

= 25°C unless otherwise noted

Parameter

Average Rectified Current

@ T

= 50°C

Peak Forward Surge Current

8.3 ms single half-sine-wave

Superimposed on rated load (JEDEC method)

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient,** per leg

Thermal Resistance, Junction to Lead,** per leg

Storage Tem perature Range

Operating Junction Tem perature

Value

0.5

Units

1.4

-55 to +150

mW/°C

°C/W

°C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Device mounted on PCB with 0.5-0.5" (13x13 mm) lead length.

Electrical Characteristics

Parameter

= 25°C unless otherwise noted

Device

200

140

200

400

280

400

5.0

0.5

1.0

5.0

600

420

600

800

560

800

100

Units

Peak Repetitive Reverse Voltage

Maximum RMS Bridge Input Voltage

DC Reverse Voltage

(Rated V

)

Maximum Reverse Leakage,

per leg @ rated V

= 25°C

= 125°C

Maximum Forward Voltage Drop,

per bridge

@ 0.5 A

I t rating for fusing

t < 8.3 ms

Typi cal Junction Capacitance, per leg

= 4.0 V, f = 1.0 MHz

ã1999

Fairchild Semiconductor Corporation

MB1S-MB8S, Rev. A

MB3S Related Products

	MB3S	MB8S	MB7S	MB5S
Description	0.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	0.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	0.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	0.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Number of terminals	4	4	4	4
Number of components	4	4	4	4
Minimum breakdown voltage	800 V	800 V	800 V	800 V
surface mount	Yes	YES	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	pair	DUAL	pair	pair
Diode component materials	silicon	SILICON	silicon	silicon
Diode type	bridge rectifier diode	BRIDGE RECTIFIER DIODE	bridge rectifier diode	bridge rectifier diode
Phase	1	1	1	1
Maximum repetitive peak reverse voltage	800 V	800 V	800 V	800 V
Maximum non-repetitive peak forward current	35 A	35 A	35 A	35 A
Maximum average input current	0.5000 A	-	0.5000 A	0.5000 A
Processing package description	Plastic, MBS-1, 4 PIN	-	Plastic, MBS-1, 4 PIN	Plastic, MBS-1, 4 PIN
state	DISCONTINUED	-	DISCONTINUED	DISCONTINUED
packaging shape	Rectangle	-	Rectangle	Rectangle
Package Size	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
terminal coating	tin lead	-	tin lead	tin lead
Packaging Materials	Plastic/Epoxy	-	Plastic/Epoxy	Plastic/Epoxy
structure	Bridge, 4 ELEMENTS	-	Bridge, 4 ELEMENTS	Bridge, 4 ELEMENTS

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