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1N5230BTAP

Description
DIODE 4.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, ROHS COMPLIANT, GLASS PACKAGE-2, Voltage Regulator Diode
CategoryDiscrete semiconductor    diode   
File Size94KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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1N5230BTAP Overview

DIODE 4.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, ROHS COMPLIANT, GLASS PACKAGE-2, Voltage Regulator Diode

1N5230BTAP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDO-35
package instructionROHS COMPLIANT, GLASS PACKAGE-2
Contacts2
Reach Compliance Codeunknow
Base Number Matches1
1N5221B to 1N5267B
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Silicon planar power Zener diodes
• Standard Zener voltage tolerance is ± 5 %
• These diodes are also available in MiniMELF
case with the type designation TZM5221 to
TZM5267, SOT-23 case with the type
designations MMBZ5225 to MMBZ5267 and
SOD-123 case with the types designations
MMSZ5225 to MMSZ5267
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
UNIT
V
mA
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.4 to 75
1.7 to 20
Thermal equilibrium
Single
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Voltage stabilization
ORDERING INFORMATION
DEVICE NAME
1N5221B to 1N5267B
1N5221B to 1N5267B
ORDERING CODE
1N5221B to 1N5267B-series-TR
1N5221B to 1N5267B-series-TAP
TAPED UNITS PER REEL
10 000 per 13" reel
10 000 per ammopack
(52 mm tape)
MINIMUM ORDER QUANTITY
30 000/box
30 000/box
PACKAGE
PACKAGE NAME
DO-35
WEIGHT
125 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Zener current
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Forward voltage (max.)
I
F
= 200 mA
I = 4 mm, T
L
= constant
TEST CONDITION
T
L
25 °C
SYMBOL
P
tot
I
Z
R
thJA
T
j
T
stg
V
F
VALUE
500
P
tot
/V
Z
300
175
- 65 to + 175
1.1
UNIT
mW
mA
K/W
°C
°C
V
Rev. 2.0, 31-Jan-12
Document Number: 85588
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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