GWM120-0075X1-BL datasheet, PDF

GWM120-0075X1-BL: DescriptionPower Field-Effect Transistor, 110A I(D), 75V, 0.0049ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size259KB，6 Pages; ManufacturerIXYS; Environmental Compliance

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GWM120-0075X1-BL Overview

Power Field-Effect Transistor, 110A I(D), 75V, 0.0049ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IXYS
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	75 V
Maximum drain current (Abs) (ID)	110 A
Maximum drain current (ID)	110 A
Maximum drain-source on-resistance	0.0049 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDIP-T17
Number of components	6
Number of terminals	17
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	GWM120-0075X1-BL
Description	Power Field-Effect Transistor, 110A I(D), 75V, 0.0049ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IXYS
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	75 V
Maximum drain current (Abs) (ID)	110 A
Maximum drain current (ID)	110 A
Maximum drain-source on-resistance	0.0049 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDIP-T17
Number of components	6
Number of terminals	17
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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