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MBR3045CT

Description
15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size94KB,2 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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MBR3045CT Overview

15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB

MBR3045CT Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionGREEN, PLASTIC PACKAGE-3
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingPURE TIN
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureCOMMON CATHODE, 2 ELEMENTS
Shell connectionCATHODE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
applicationEFFICIENCY
Phase1
Maximum repetitive peak reverse voltage45 V
Maximum average forward current15 A
Maximum non-repetitive peak forward current200 A
MCC
Features
  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
MBR3030CT
THRU
MBR3060CT
30
Amp
Schottky Barrier
Rectifier
30
to
60
Volts
TO-220AB
B
L
M
D
A
PIN
1
2
3
Metal of silicon rectifier, majority carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +175°C
Maximum
Rcurrent
Peak Reverse
Voltage
30V
35V
40V
45V
50V
60V
Maximum DC
Blocking
Voltage
30V
35V
40V
45V
50V
60V
C
K
MCC
Part Number
MBR3030CT
MBR3035CT
MBR3040CT
MBR3045CT
MBR3050CT
MBR3060CT
Maximum
RMS Voltage
21V
24.5V
28V
31.5V
35V
42V
E
F
G
I
J
N
H H
PIN 1
PIN 2
CASE
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
MBR3030CT-3045CT
MBR3050CT-3060CT
MBR3030CT-3045CT
MBR3050CT-3060CT
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
MBR3030CT-3045CT
MBR3050CT-3060CT
I
F(AV)
I
FSM
30
A
200A
T
C
=100°C
8.3ms, half sine
PIN 3
V
F
.84 V
.95 V
.72 V
.85 V
0.2
mA
I
FM
=
30.0A
;
T
J
= 25°C
T
J
=
125°C

A
B
C
D
E
F
G
H
I
J
K
L
M
N


MM

14.22
9.65
2.54
5.84
9.65
------
12.70
2.29
0.51
0.30
3.53
3.56
1.14
2.03


15.88
10.67
3.43
6.86
10.67
6.35
14.73
2.79
1.14
0.64
4.09
4.83
1.40
2.92
 
I
R
T
J
= 25°C
C
J
Measured at
1.0MHz, V
R
=4.0V
450pF
400pF
INCHES



.560
.625
.380
.420
.100
.135
.230
.270
.380
.420
------
.250
.500
.580
.090
.110
.020
.045
.012
.025
.139
.161
.140
.190
.045
.055
.080
.115
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
www.mccsemi.com

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