5000mA, 150V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, MS-012, SOP-8
Parameter Name | Attribute value |
Maker | NXP |
package instruction | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 150 V |
Maximum drain current (ID) | 5 A |
Maximum drain-source on-resistance | 0.075 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | MS-012AA |
JESD-30 code | R-PDSO-G8 |
Number of components | 1 |
Number of terminals | 8 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | DUAL |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |
934057307518 | |
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Description | 5000mA, 150V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, MS-012, SOP-8 |
Maker | NXP |
package instruction | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 150 V |
Maximum drain current (ID) | 5 A |
Maximum drain-source on-resistance | 0.075 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | MS-012AA |
JESD-30 code | R-PDSO-G8 |
Number of components | 1 |
Number of terminals | 8 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | DUAL |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |