20mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN
Parameter Name | Attribute value |
Maker | NXP |
package instruction | CHIP CARRIER, R-PBCC-N3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Other features | BUILT-IN BIAS RESISTOR RATIO IS 1 |
Shell connection | COLLECTOR |
Maximum collector current (IC) | 0.02 A |
Collector-emitter maximum voltage | 50 V |
Configuration | SINGLE WITH BUILT-IN RESISTOR |
Minimum DC current gain (hFE) | 80 |
JESD-30 code | R-PBCC-N3 |
Number of components | 1 |
Number of terminals | 3 |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | CHIP CARRIER |
Polarity/channel type | PNP |
surface mount | YES |
Terminal form | NO LEAD |
Terminal location | BOTTOM |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |
934058284315 | PDTA115EK T/R | PDTA115ES126 | 934058177115 | |
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Description | 20mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN | Digital transistor pnp W/res 50v | Bipolar Transistors - Pre-Biased TRANS BISS AMMO LARGE | 20mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN |
Configuration | SINGLE WITH BUILT-IN RESISTOR | - | Single | SINGLE WITH BUILT-IN RESISTOR |