IDT71B65S35L32B8 datasheet, PDF

IDT71B65S35L32B8: DescriptionStandard SRAM, 8KX8, 35ns, BICMOS, CQCC32, LCC-32; Categorystorage storage; File Size43KB，2 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT71B65S35L32B8 Overview

Standard SRAM, 8KX8, 35ns, BICMOS, CQCC32, LCC-32

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Parts packaging code	QFJ
package instruction	QCCN,
Contacts	32
Reach Compliance Code	compliant
ECCN code	3A001.A.2.C
Maximum access time	35 ns
JESD-30 code	R-CQCC-N32
JESD-609 code	e0
length	13.97 mm
memory density	65536 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	32
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	8KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QCCN
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
Certification status	Not Qualified
Maximum seat height	3.048 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	BICMOS
Temperature level	MILITARY
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	30
width	11.43 mm
Base Number Matches	1

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