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IRFS240

Description
Power Field-Effect Transistor, 12.5A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, FULL PACK-3
CategoryDiscrete semiconductor    The transistor   
File Size32KB,1 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

IRFS240 Overview

Power Field-Effect Transistor, 12.5A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, FULL PACK-3

IRFS240 Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeTO-3P
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)12.5 A
Maximum drain-source on-resistance0.18 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Base Number Matches1
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