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HI45H11

Description
PNP EPITAXIAL PLANAR TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size18KB,2 Pages
ManufacturerHSMC
Websitehttp://www.hsmc.com.tw/
Download Datasheet Parametric View All

HI45H11 Overview

PNP EPITAXIAL PLANAR TRANSISTOR

HI45H11 Parametric

Parameter NameAttribute value
MakerHSMC
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)10 A
ConfigurationSingle
Minimum DC current gain (hFE)40
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)20 W
surface mountNO
Base Number Matches1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9006-B
Issued Date : 1994.11.09
Revised Date : 2000.11.01
Page No. : 1/2
HI45H11
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HI45H11 is designed for various specific and general purpose
applications, such as: output and driver stages of amplifiers opera-
ting at frequencies from DC to greater than 1MHz;series, shunt and
switching regulators; low and high frequency inverters/converters;
and many others.
Absolute Maximum Ratings
(Ta=25°C)
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 20 W
Maximum Voltages and Currents
BVCEO Collector to Base Voltage ..................................................................................... -80 V
BVCES Collector to Emitter Voltage .................................................................................. -80 V
BVEBO Emitter to Base Voltage .......................................................................................... -5 V
IC Collector Current .......................................................................................................... -10 A
IB Base Current ................................................................................................................... -5 A
Characteristics
(Ta=25°C)
Symbol
BVCEO
BVCES
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
Cob
fT
Min.
-80
-80
-5
-
-
-
-
60
40
-
-
Typ.
-
-
-
-
-
-
-
-
-
230
40
Max.
-
-
-
-10
-50
-1
-1.5
-
-
-
-
Unit
V
V
V
uA
uA
V
V
Test Conditions
IC=-100mA, IB=0
IC=-1mA, IB=0
IE=-1mA, IC=0
VCB=-80V, IE=0
VEB=-5V, IC=0
IC=-8A, IB=-0.8A
IC=-8A, IB=-0.8A
VCE=-1V, IC=-2A
VCE=-1V, IC=-4A
VCB=-10V
VCE=-10V, IC=-500mA, f=20MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
pF
MHz
HSMC Product Specification
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