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HGTG12N60A4D

Description
54 A, 600 V, N-CHANNEL IGBT, TO-247
CategoryDiscrete semiconductor    The transistor   
File Size163KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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HGTG12N60A4D Overview

54 A, 600 V, N-CHANNEL IGBT, TO-247

HGTG12N60A4D Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-247
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Manufacturer packaging codeTO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
Reach Compliance Code_compli
ECCN codeEAR99
Samacsys Confidence4
Samacsys StatusReleased
Samacsys PartID985894
Samacsys Pin Cou3
Samacsys Part CategoryTransis
Samacsys Package CategoryTransistor Outline, Vertical
Samacsys Footprint NameTO−247−3LD CASE 340CK ISSUE O
Samacsys Released Date2017-11-15 14:13:44
Is SamacsysN
Other featuresLOW CONDUCTION LOSS
Shell connectionCOLLECTOR
Maximum collector current (IC)54 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum landing time (tf)95 ns
Gate-emitter maximum voltage20 V
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)167 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)180 ns
Nominal on time (ton)33 ns
Base Number Matches1

HGTG12N60A4D Related Products

HGTG12N60A4D HGTP12N60A4D
Description 54 A, 600 V, N-CHANNEL IGBT, TO-247 54 A, 600 V, N-CHANNEL IGBT
Brand Name Fairchild Semiconduc Fairchild Semiconduc
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Parts packaging code TO-247 TO-220
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Manufacturer packaging code TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Reach Compliance Code _compli compli
ECCN code EAR99 EAR99
Is Samacsys N N
Other features LOW CONDUCTION LOSS LOW CONDUCTION LOSS
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 54 A 54 A
Collector-emitter maximum voltage 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Maximum landing time (tf) 95 ns 95 ns
Gate-emitter maximum voltage 20 V 20 V
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 167 W 167 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON
Nominal off time (toff) 180 ns 180 ns
Nominal on time (ton) 33 ns 33 ns
Base Number Matches 1 1

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