|
HGTG12N60A4D |
HGTP12N60A4D |
Description |
54 A, 600 V, N-CHANNEL IGBT, TO-247 |
54 A, 600 V, N-CHANNEL IGBT |
Brand Name |
Fairchild Semiconduc |
Fairchild Semiconduc |
Is it lead-free? |
Lead free |
Lead free |
Is it Rohs certified? |
conform to |
conform to |
Parts packaging code |
TO-247 |
TO-220 |
package instruction |
FLANGE MOUNT, R-PSFM-T3 |
FLANGE MOUNT, R-PSFM-T3 |
Contacts |
3 |
3 |
Manufacturer packaging code |
TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB |
TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB |
Reach Compliance Code |
_compli |
compli |
ECCN code |
EAR99 |
EAR99 |
Is Samacsys |
N |
N |
Other features |
LOW CONDUCTION LOSS |
LOW CONDUCTION LOSS |
Shell connection |
COLLECTOR |
COLLECTOR |
Maximum collector current (IC) |
54 A |
54 A |
Collector-emitter maximum voltage |
600 V |
600 V |
Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
Maximum landing time (tf) |
95 ns |
95 ns |
Gate-emitter maximum voltage |
20 V |
20 V |
JESD-30 code |
R-PSFM-T3 |
R-PSFM-T3 |
JESD-609 code |
e3 |
e3 |
Number of components |
1 |
1 |
Number of terminals |
3 |
3 |
Maximum operating temperature |
150 °C |
150 °C |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
RECTANGULAR |
RECTANGULAR |
Package form |
FLANGE MOUNT |
FLANGE MOUNT |
Peak Reflow Temperature (Celsius) |
NOT SPECIFIED |
NOT SPECIFIED |
Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
Maximum power dissipation(Abs) |
167 W |
167 W |
Certification status |
Not Qualified |
Not Qualified |
surface mount |
NO |
NO |
Terminal surface |
Matte Tin (Sn) |
Matte Tin (Sn) |
Terminal form |
THROUGH-HOLE |
THROUGH-HOLE |
Terminal location |
SINGLE |
SINGLE |
Maximum time at peak reflow temperature |
NOT SPECIFIED |
NOT SPECIFIED |
transistor applications |
POWER CONTROL |
POWER CONTROL |
Transistor component materials |
SILICON |
SILICON |
Nominal off time (toff) |
180 ns |
180 ns |
Nominal on time (ton) |
33 ns |
33 ns |
Base Number Matches |
1 |
1 |