3N209
MOS FIELD-EFFECT TRANSISTOR
DESCRIPTION:
The
ASI 3N209
is an N-Channel
Dual-Gate Depletion Type Transistor
With Monolithic Gate Protection
Diodes, Used in UHF Low Noise
Amplifier Applications.
PACKAGE STYLE TO-72
MAXIMUM RATINGS
I
V
DS
P
DISS
P
DISS
T
J
T
STG
30 mA
25 V
300 mW @ T
A
= 25 °C
1.71 W @ T
C
= 25 °C
-65 °C to +175 °C
-65 °C to +175 °C
1 = DRAIN
2 = GATE #2
3 = GATE #1
4 = CASE,SOURCE,SUBSTRATE
CHARACTERISTICS
SYMBOL
V
(BR)DSX
V
(BR)G1
V
(BR)G2
I
G1SS
I
D
= 10
µA
T
C
= 25 °C
NONE
TEST CONDITIONS
V
G1S
= -4.0 V
V
G2S
= 0 V
V
G1S
= 0 V
V
G2S
= -4.0 V
V
DS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
T
A
= 150 °C
V
DS
= 0 V
T
A
= 150 °C
V
G2S
= 4.0 V
I
D
= 10 mA
f = 1.0 KHz
I
D
= 5.0 mA
f = 1.0 MHz
I
G1
=
±
10 mA
I
G2
=
±
10 mA
MINIMUM
25
±7.0
±7.0
TYPICAL
MAXIMUM
±22
±22
±20
-10
±20
-10
UNITS
V
V
V
µ
A
µ
A
mA
mmhos
V
G1S
=
±
6.0 V V
G2S
= 0 V
V
G2S
=
±
6.0 V V
G1S
= 0 V
I
G2SS
I
DS
|
y
fs
|
C
iss
C
rss
C
oss
V
DS
= 15 V
V
G2S
= 4.0 V
V
DS
= 15 V
V
DS
= 15 V
V
G1S
= 0 V
V
G2S
= 4.0 V
5.0
10
13
3.3
0.005
0.5
0.023
2.0
30
20
7.0
0.03
4.0
pF
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/2
3N211
MOS FIELD-EFFECT TRANSISTOR
CHARACTERISTICS
SYMBOL
NF
G
PS
B
T
C
= 25 °C
TEST CONDITIONS
V
DS
= 15 V
f = 500 MHz
V
G2S
= 4.0 V
I
D
= 10 mA
MINIMUM
10
7.0
TYPICAL
4.0
13
MAXIMUM
6.0
20
17
UNITS
dB
MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
2/2
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