CFY27-PS datasheet, PDF - EEWORLD Datasheet

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CFY27-PS: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MICRO-X-4; CategoryDiscrete semiconductor The transistor; File Size45KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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CFY27-PS Overview

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MICRO-X-4

CFY27-PS Parametric

Parameter Name	Attribute value
Maker	Infineon
package instruction	DISK BUTTON, O-CRDB-F4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	9 V
Maximum drain current (Abs) (ID)	0.42 A
Maximum drain current (ID)	0.42 A
FET technology	METAL SEMICONDUCTOR
highest frequency band	KU BAND
JESD-30 code	O-CRDB-F4
JESD-609 code	e3
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Maximum operating temperature	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	0.9 W
Minimum power gain (Gp)	17.5 dB
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE
Base Number Matches	1

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CFY27

HiRel

Ku-Band GaAs General Purpose MESFET

•

HiRel

Discrete and Microwave

Semiconductor

•

For professional pre- and driver-amplifiers

For frequencies from 500 MHz to 20 GHz

Hermetically sealed microwave package

High gain, medium power

Component Under Development

Space Qualification Expected 1998

ESA/SCC Detail Spec. No.: 5613/008,

Type Variant No.s 06 and 07 foreseen (tbc.)

•

ESD: Electrostatic discharge

sensitive device, observe handling precautions!

Type

Marking

Ordering Code Pin Configuration

Package

CFY27-38 (ql)

CFY27-P (ql)

see below

Micro-X

CFY27-nnl: specifies gain and output power levels (see electrical characteristics)

(ql) Quality Level:

P: Professional Quality,

H: High Rel Quality,

S: Space Quality,

ES: ESA Space Quality,

Ordering Code:

Q62703F121

on request

(see order instructions for ordering example)

Semiconductor Group

1 of 8

Draft D, Jul. 98

CFY27-PS Related Products

	CFY27-PS	CFY27-38P	CFY27-38ES	CFY27-38H	CFY27-PH	CFY27-38S	CFY27-PES	CFY27-PP
Description	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MICRO-X-4	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MICRO-X-4	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MICRO-X-4	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MICRO-X-4	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MICRO-X-4	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MICRO-X-4	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MICRO-X-4	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MICRO-X-4
Maker	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon
package instruction	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-CRDB-F4
Contacts	4	4	4	4	4	4	4	4
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	9 V	9 V	9 V	9 V	9 V	9 V	9 V	9 V
Maximum drain current (Abs) (ID)	0.42 A	0.42 A	0.42 A	0.42 A	0.42 A	0.42 A	0.42 A	0.42 A
Maximum drain current (ID)	0.42 A	0.42 A	0.42 A	0.42 A	0.42 A	0.42 A	0.42 A	0.42 A
FET technology	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
highest frequency band	KU BAND	KU BAND	KU BAND	KU BAND	KU BAND	KU BAND	KU BAND	KU BAND
JESD-30 code	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4
JESD-609 code	e3	e3	e3	e3	e3	e3	e3	e3
Number of components	1	1	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4	4	4
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	0.9 W	0.9 W	0.9 W	0.9 W	0.9 W	0.9 W	0.9 W	0.9 W
Minimum power gain (Gp)	17.5 dB	7.5 dB	7.5 dB	7.5 dB	17.5 dB	7.5 dB	17.5 dB	17.5 dB
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
Terminal surface	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE
Base Number Matches	1	1	1	1	1	1	1	1

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