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HL6340MG

Description
635nm, LASER DIODE
CategoryLED optoelectronic/LED    photoelectric   
File Size59KB,10 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

HL6340MG Overview

635nm, LASER DIODE

HL6340MG Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Reach Compliance Codecompliant
ConfigurationSINGLE WITH BUILT-IN PHOTO DIODE
Number of functions1
Maximum operating temperature50 °C
Minimum operating temperature-10 °C
Optoelectronic device typesLASER DIODE
Nominal output power5 mW
peak wavelength635 nm
shapeROUND
size1.6 mm
Maximum threshold current30 mA
Base Number Matches1
HL6340MG/41MG
Circular Beam Low Operating Current
ADE-208-1437B (Z)
Rev.2
Mar. 2002
Description
The HL6340MG/41MG are 0.63
µm
band AlGaInP laser diodes can be operated with low operating
current. These products were designed by self aligned refractive index (SRI) active layer structure. These
are suitable as a light source for laser levelers, laser scanners and optical equipment for measurement.
Application
Laser leveler
Laser scanner
Measurement
Features
Optical output power
Visible light power
Low aspect ratio
TM mode oscillation
Package Type
HL6340MG/41MG: MG
Internal Circuit
HL6340MG
1
3
: 5 mW CW
: 635 nm Typ
: 1.2 Typ
Low operating current : 25 mA Typ
Operating temperature : +50°C
Internal Circuit
HL6341MG
1
3
PD
LD
PD
LD
2
2

HL6340MG Related Products

HL6340MG HL6341MG
Description 635nm, LASER DIODE 635nm, LASER DIODE
Maker Renesas Electronics Corporation Renesas Electronics Corporation
Reach Compliance Code compliant compliant
Configuration SINGLE WITH BUILT-IN PHOTO DIODE SINGLE WITH BUILT-IN PHOTO DIODE
Number of functions 1 1
Maximum operating temperature 50 °C 50 °C
Minimum operating temperature -10 °C -10 °C
Optoelectronic device types LASER DIODE LASER DIODE
Nominal output power 5 mW 5 mW
peak wavelength 635 nm 635 nm
shape ROUND ROUND
size 1.6 mm 1.6 mm
Maximum threshold current 30 mA 30 mA
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