MD2114L2/883C datasheet, PDF - EEWORLD Datasheet

MD2114L2/883C: DescriptionStandard SRAM, 1KX4, 200ns, MOS, CDIP18; Categorystorage storage; File Size191KB，4 Pages; ManufacturerGeneral Electric Solid State

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MD2114L2/883C Overview

Standard SRAM, 1KX4, 200ns, MOS, CDIP18

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	DIP, DIP18,.3
Reach Compliance Code	unknow
Maximum access time	200 ns
I/O type	COMMON
JESD-30 code	R-XDIP-T18
JESD-609 code	e0
memory density	4096 bi
Memory IC Type	STANDARD SRAM
memory width	4
Number of terminals	18
word count	1024 words
character code	1000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	1KX4
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP18,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883 Class C
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	MOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Base Number Matches	1

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