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CD13002B

Description
Small Signal Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size1MB,4 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Environmental Compliance
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CD13002B Overview

Small Signal Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3

CD13002B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRectron Semiconductor
Parts packaging codeTO-92
package instructionCYLINDRICAL, R-PBCY-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)18
JEDEC-95 codeTO-92
JESD-30 codeR-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)265
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz
Maximum off time (toff)1300 ns
Base Number Matches1
CD13002
TO-92 PLASTIC PACKAGE
NPN SILICON PLANAR EPITAXIAL,HIGH VOLTAGE
FAST SWITCHING POWER TRANSISTOR
Compact Fluorescent Lamps (CFLS)
CB
ABSOLUTE MAXIMUM RATING (T
a
=25ºC )
DESCRIPTION
SYMBOL
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage
V
EBO
Emitter Base Voltage
I
C
Collector Current Continuous
I
CM
Peak
P
D
Power Dissipation
Operating and Storage Junction
T
j
, T
stg
Temperature Range
E
VALUE
600
400
9.0
1.0
1.5
1.0
- 55 to +150
UNIT
V
V
V
A
A
W
ºC
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
V
CBO
I
C
=1mA, I
E
=0
Collector Base Voltage
V
CEO
I
C
=1mA, I
B
=0
Collector Emitter Voltage
V
EBO
I
E
=1mA, I
C
=0
Emitter Base Voltage
I
CBO
V
CB
=600V, I
E
= 0
Collector Cut Off Current
I
CEO
V
CE
=400V, I
B
= 0
Collector Cut Off Current
I
EBO
V
EB
=9V, I
C
=0
Emitter Cut Off Current
h
FE
*V
CE
=5V, I
C
=0.1A
DC Current Gain
V
CE
=5V, I
C
=400mA
V
CE (sat)
I
C
=100mA, I
B
=50mA
Collector Emitter Saturation Voltage
I
C
=230mA, I
B
=50mA
V
BE (sat)
I
C
=100mA, I
B
=50mA
Base Emitter Saturation Voltage
t
f
I
C
=0.11A
Fall Time
t
s
I
C
=0.1A, I
B1
= I
B2
=0.05A
Storage Time
f
T
V
CE
=10V, I
C
=0.1A,f=1MHz
Transition Frequency
*h
FE
Classification
Note:- Product is pre selected in DC current
gain (Groups A to E). RECTRON reserves the right
to ship any of the groups according to
production availability.
MARKING
A
15-19
B
18-22
C
21-25
MIN
600
400
9.0
TYP
MAX
15
5.0
0.05
0.12
0.82
0.07
4.0
E
24-28
100
50
100
28
20
0.11
0.24
0.88
0.4
0.9
UNIT
V
V
V
mA
mA
mA
V
V
V
ms
ms
MHz
CD
13002A
XY
TCD
13002A
XY
CD
13002B
XY
TCD
13002B
XY
CD
13002C
XY
TCD
13002C
XY
CD
13002E
XY
TCD
13002E
XY
X = Year of Manufacturer Code
Y = Month Code

CD13002B Related Products

CD13002B CD13002A CD13002 CD13002E CD13002C
Description Small Signal Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3
Is it lead-free? Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor
Parts packaging code TO-92 TO-92 TO-92 TO-92 TO-92
package instruction CYLINDRICAL, R-PBCY-T3 CYLINDRICAL, R-PBCY-T3 PLASTIC PACKAGE-3 CYLINDRICAL, R-PBCY-T3 CYLINDRICAL, R-PBCY-T3
Contacts 3 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 400 V 400 V 400 V 400 V 400 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 18 15 15 24 21
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code R-PBCY-T3 R-PBCY-T3 R-PBCY-T3 R-PBCY-T3 R-PBCY-T3
JESD-609 code e3 e3 e3 e3 e3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 265 265 265 265 265
Polarity/channel type NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 4 MHz 4 MHz 4 MHz 4 MHz 4 MHz
Maximum off time (toff) 1300 ns 1300 ns 1300 ns 1300 ns 1300 ns
Base Number Matches 1 1 1 1 1

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