Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | International Rectifier （ Infineon ） |
| Parts packaging code | TO-254AA |
| package instruction | FLANGE MOUNT, S-XSFM-P3 |
| Contacts | 3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Other features | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 500 mJ |
| Shell connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V |
| Maximum drain current (ID) | 35 A |
| Maximum drain-source on-resistance | 0.049 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | S-XSFM-P3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | UNSPECIFIED |
| Package shape | SQUARE |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 140 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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