NES1823S-45 datasheet, PDF - EEWORLD Datasheet

NES1823S-45: DescriptionRF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, LEAD FREE, PLASTIC, T-142M, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size93KB，8 Pages; ManufacturerNEC Electronics

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NES1823S-45 Overview

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, LEAD FREE, PLASTIC, T-142M, 2 PIN

Parameter Name	Attribute value
Maker	NEC Electronics
package instruction	LEAD FREE, PLASTIC, T-142M, 2 PIN
Reach Compliance Code	unknown
Other features	HIGH EFFICIENCY
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	12 V
FET technology	JUNCTION
highest frequency band	S BAND
JESD-30 code	R-PDFM-F2
Number of components	1
Number of terminals	2
Operating mode	DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Transistor component materials	GALLIUM ARSENIDE
Base Number Matches	1

	NES1823S-45
Description	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, LEAD FREE, PLASTIC, T-142M, 2 PIN
Maker	NEC Electronics
package instruction	LEAD FREE, PLASTIC, T-142M, 2 PIN
Reach Compliance Code	unknown
Other features	HIGH EFFICIENCY
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	12 V
FET technology	JUNCTION
highest frequency band	S BAND
JESD-30 code	R-PDFM-F2
Number of components	1
Number of terminals	2
Operating mode	DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Transistor component materials	GALLIUM ARSENIDE
Base Number Matches	1

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