V
CE
I
C
=
=
3300 V
1200 A
ABB HiPak
TM
IGBT Module
5SNA 1200G330100
Doc. No. 5SYA1563-03 01-2014
Low-loss, rugged SPT chip-set
Smooth switching SPT chip-set for
good EMC
High insulation package
High power density
AlSiC base-plate for high power
cycling capability
AlN substrate for low thermal
resistance
Maximum rated values
Parameter
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
Total power dissipation
DC forward current
Peak forward current
Surge current
IGBT short circuit SOA
Isolation voltage
Junction temperature
Junction operating temperature
Case temperature
Storage temperature
Mounting torques
1)
2)
2)
1)
Symbol
V
CES
I
C
I
CM
V
GES
P
tot
I
F
I
FRM
I
FSM
t
psc
V
isol
T
vj
T
vj(op)
T
c
T
stg
M
s
M
t1
M
t2
Conditions
V
GE
= 0 V
T
c
= 80 °C
t
p
= 1 ms, T
c
= 80 °C
min
max
3300
1200
2400
Unit
V
A
A
V
W
A
A
A
µs
V
°C
°C
°C
°C
Nm
-20
T
c
= 25 °C, per switch (IGBT)
20
11750
1200
2400
V
R
= 0 V, T
vj
= 125 °C,
t
p
= 10 ms, half-sinewave
V
CC
= 2500 V, V
CEM CHIP
3300 V
V
GE
15 V, T
vj
125 °C
1 min, f = 50 Hz
-50
-50
-50
Base-heatsink, M6 screws
Main terminals, M8 screws
Auxiliary terminals, M4 screws
4
8
2
12000
10
10200
150
125
125
125
6
10
3
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SNA 1200G330100
IGBT characteristic values
Parameter
Collector (-emitter)
breakdown voltage
Collector-emitter
4)
saturation voltage
Collector cut-off current
Gate leakage current
Gate-emitter threshold voltage
Gate charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
3)
Symbol
V
(BR)CES
V
CE sat
I
CES
I
GES
V
GE(TO)
Q
ge
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
Conditions
V
GE
= 0 V, I
C
= 10 mA, T
vj
= 25 °C
I
C
= 1200 A, V
GE
= 15 V
V
CE
= 3300 V, V
GE
= 0 V
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
3300
typ
max
Unit
V
3.1
3.5
3.85
4.3
12
120
-500
5.5
10.9
187
500
7.5
V
V
mA
mA
nA
V
µC
V
CE
= 0 V, V
GE
=
20
V, T
vj
= 125 °C
I
C
= 240 mA, V
CE
= V
GE
, T
vj
= 25 °C
I
C
= 1200 A, V
CE
= 1800 V,
V
GE
= -15 V .. 15 V
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz,
T
vj
= 25 °C
V
CC
= 1800 V,
I
C
= 1200 A,
R
G
= 1.5
,
V
GE
=
15
V,
L
= 125 nH, inductive load
V
CC
= 1800 V,
I
C
= 1200 A,
R
G
= 1.5
,
V
GE
=
15
V,
L
= 125 nH, inductive load
V
CC
= 1800 V, I
C
= 1200 A,
V
GE
= ±15 V, R
G
= 1.5
,
L
= 125 nH, inductive load
V
CC
= 1800 V, I
C
= 1200 A,
V
GE
= ±15 V, R
G
= 1.5
,
L
= 125 nH, inductive load
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
11.6
2.22
530
500
230
230
1200
1330
350
440
1260
nF
ns
ns
ns
ns
Turn-on switching energy
E
on
mJ
1730
1340
mJ
1900
5100
18
T
C
= 25 °C
T
C
= 125 °C
0.07
0.1
A
nH
mΩ
Turn-off switching energy
Short circuit current
Module stray inductance
Resistance, terminal-chip
3)
4)
E
off
I
SC
L
CE
R
CC’+EE’
t
psc
≤ 10 μs, V
GE
= 15 V, T
vj
= 125 °C,
V
CC
= 2500 V, V
CEM CHIP
≤ 3300 V
Characteristic values according to IEC 60747 – 9
Collector-emitter saturation voltage is given at chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1563-03 01-2014
page 2 of 9
5SNA 1200G330100
Diode characteristic values
Parameter
Forward voltage
6)
5)
Symbol
V
F
I
rr
Q
rr
t
rr
E
rec
Conditions
I
F
= 1200 A
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
V
CC
= 1800 V,
I
F
= 1200 A,
V
GE
=
15
V,
R
G
= 1.5
L
= 125 nH
inductive load
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
2.0
typ
2.3
2.35
1090
1420
710
1300
560
1280
880
1670
max
2.7
Unit
V
A
µC
ns
mJ
Reverse recovery current
Recovered charge
Reverse recovery time
Reverse recovery energy
5)
6)
Characteristic values according to IEC 60747 – 2
Forward voltage is given at chip level
7)
Package properties
Parameter
IGBT thermal resistance
junction to case
Diode thermal resistance
junction to case
IGBT thermal resistance
case to heatsink
Diode thermal resistance
case to heatsink
Symbol
R
th(j-c)IGBT
R
th(j-c)DIODE
2)
Conditions
min
typ
max
Unit
0.0085 K/W
0.017 K/W
0.009
0.018
K/W
K/W
V
600
R
th(c-s)IGBT
IGBT per switch,
grease = 1W/m
x
K
R
th(c-s)DIODE
Diode per switch,
grease = 1W/m
x
K
V
e
CTI
f = 50 Hz, Q
PD
10pC (acc. to IEC 61287) 5100
7)
Partial discharge extinction
voltage
Comparative tracking index
2)
For detailed mounting instructions refer to ABB Document No. 5SYA2039
7)
Mechanical properties
Parameter
Dimensions
Clearance distance in air
Surface creepage distance
Mass
7)
Symbol
L
x
W
d
a
d
s
m
x
Conditions
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
min
40
26
64
56
typ
max
Unit
mm
mm
mm
H Typical , see outline drawing
190
x
140
x
48
1670
g
Package and mechanical properties according to IEC 60747 – 15
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1563-03 01-2014
page 3 of 9
5SNA 1200G330100
Electrical configuration
Outline drawing
2)
Note: all dimensions are shown in mm
2)
For detailed mounting instructions refer to ABB Document No. 5SYA2039
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1563-03 01-2014
page 4 of 9
5SNA 1200G330100
2400
2400
V
CE
= 20V
2000
25 °C
1600
125 °C
I
C
[A]
I
C
[A]
2000
1600
1200
1200
800
800
125°C
400
V
GE
= 15 V
0
0
1
2
3
V
CE
[V]
4
5
6
400
25°C
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13
V
GE
[V]
Fig. 1
Typical on-state characteristics, chip level
Fig. 2
Typical transfer characteristics, chip level
2400
T
vj
= 25 °C
17 V
2000
15 V
13 V
1600
11 V
I
C
[A]
2400
17 V
2000
15 V
13 V
1600
11 V
I
C
[A]
1200
1200
800
9V
400
800
9V
400
T
vj
= 125 °C
0
0
1
2
V
CE
[V]
3
4
5
0
0
1
2
3
4
5
6
7
V
CE
[V]
Fig. 3
Typical output characteristics, chip level
Fig. 4
Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1563-03 01-2014
page 5 of 9
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