BF1101WR115 datasheet, PDF - EEWORLD Datasheet

BF1101WR115: DescriptionRF MOSFET Transistors N-CH DUAL GATE 7V; Categorysemiconductor Discrete semiconductor; File Size149KB，16 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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RF MOSFET Transistors N-CH DUAL GATE 7V

Parameter Name	Attribute value
Product Category	RF MOSFET Transistors
Manufacturer	NXP
RoHS	Details
Transistor Polarity	N-Channel
Id - Continuous Drain Current	30 mA, 30 mA
Vds - Drain-Source Breakdown Voltage	7 V, 7 V
Rds On - Drain-Source Resistance	-
Technology	Si
Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C
Mounting Style	SMD/SMT
Package / Case	SOT-343R-4
Packaging	Reel
Packaging	MouseReel
Packaging	Cut Tape
Channel Mode	Enhancement
Configuration	Single Dual Gate
Height	1 mm
Length	2.2 mm
Pd - Power Dissipation	200 mW
Factory Pack Quantity	3000
Type	RF Small Signal MOSFET
Vgs - Gate-Source Voltage	16 V, 16 V
Width	1.35 mm
Unit Weight	0.000212 oz

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