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3N259

Description
Bridge Rectifiers 1000V 2A BRIDGE
CategoryDiscrete semiconductor    diode   
File Size101KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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Bridge Rectifiers 1000V 2A BRIDGE

3N259 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PSIP-W4
Contacts4
Reach Compliance Codenot_compliant
Other featuresUL RECOGNIZED
Minimum breakdown voltage1000 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PSIP-W4
JESD-609 codee3
Maximum non-repetitive peak forward current60 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Maximum power dissipation4.7 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
Base Number Matches1
2KBP005M/3N253 - 2KBP10M/3N259 — Bridge Rectifiers
November 2010
2KBP005M/3N253 - 2KBP10M/3N259
Bridge Rectifiers
Features
• Surge overload rating: 60 amperes peak.
• Reliable low cost construction utilizing molded plastic technique.
• UL certified, UL #E111753.
+
~ ~ _
KBPM
* The nodules on the package may not be present on the actual parts.
Absolute Maximum Ratings *
Symbol
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
T
STG
T
J
T
a
= 25°C unless otherwise noted
Value
Parameter
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage
(Rated V
R
)
Average Rectified Forward Current,
@ T
A
= 50°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half-Sine-Wave
Storage Temperature Range
Junction Temperature
005M 01M 02M 04M 06M 08M 10M
253
50
35
50
Units
V
V
V
A
A
°C
°C
254
100
70
100
255
200
140
200
256
400
280
400
2.0
60
257
600
420
600
258
800
560
800
259
1000
700
1000
-55 to +150
-55 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient, * per leg
Parameter
Value
4.7
18
Units
W
°C/W
* Device mounted on PCB with 0.47
×
0.47” (12
×
12mm).
© 2010 Fairchild Semiconductor Corporation
2KBP005M/3N253 - 2KBP10M/3N259 Rev. E2
1
www.fairchildsemi.com

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