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IXTV30N50P

Description
MOSFET 30.0 Amps 500 V 0.2 Ohm Rds
Categorysemiconductor    Discrete semiconductor   
File Size328KB,5 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
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MOSFET 30.0 Amps 500 V 0.2 Ohm Rds

IXTV30N50P Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerIXYS ( Littelfuse )
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current30 A
Rds On - Drain-Source Resistance165 mOhms
Vgs th - Gate-Source Threshold Voltage5 V
Vgs - Gate-Source Voltage30 V
Qg - Gate Charge70 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Channel ModeEnhancement
PackagingTube
Fall Time21 ns
Forward Transconductance - Min17 S
Height15 mm
Length11 mm
Pd - Power Dissipation460 W
Rise Time27 ns
Factory Pack Quantity50
Transistor Type1 N-Channel
TypePolarHV Power MOSFET
Typical Turn-Off Delay Time75 ns
Typical Turn-On Delay Time25 ns
Width4.7 mm
Unit Weight0.105822 oz

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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