This device uses the Schottky Barrier technology with a platinum
barrier metal. This state−of−the−art device is designed for use in high
frequency switching power supplies and converters with up to 48 V
outputs. They block up to 200 V and offer improved Schottky
performance at frequencies from 250 kHz to 5.0 MHz.
Features
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 200 V
200 V Blocking Voltage
Low Forward Voltage Drop
Guardring for Stress Protection and High dv/dt Capability
(10,000 V/ms)
Dual Diode Construction
−
Terminals 1 and 3 Must be Connected for
Parallel Operation at Full Rating
AEC−Q101 Qualified and PPAP Capable
SBRB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
D
2
PAK
CASE 418B
1
4
3
Mechanical Characteristics:
Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
Weight: 1.7 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering
Purposes: 260C Max. for 10 Seconds
Device Meets MSL1 Requirements
ESD Rating:
Human Body Model = 3B
Machine Model = C
MARKING DIAGRAM
AY WW
B20200G
AKA
A
Y
WW
B20200
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
January, 2012
−
Rev. 7
1
Publication Order Number:
MBRB20200CT/D
MBRB20200CTG, SBRB20200CTT4G
MAXIMUM RATINGS
(Per Leg)
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V
R
, T
C
= 134C)
Per Leg
Per Device
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 20 kHz, T
C
= +137C)
Per Leg
Nonrepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0
ms,
1.0 kHz)
Storage Temperature Range
Operating Junction Temperature
Voltage Rate of Change (Rated V
R
)
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
10
20
I
FRM
20
I
FSM
I
RRM
T
stg
T
J
dv/dt
150
1.0
−65
to +175
−65
to +150
10,000
A
A
C
C
V/ms
A
Value
200
Unit
V
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
(Per Leg)
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Value
2.0
Unit
C/W
ELECTRICAL CHARACTERISTICS
(Per Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(I
F
= 10 A, T
C
= 25C)
(I
F
= 10 A, T
C
= 125C)
(I
F
= 20 A, T
C
= 25C)
(I
F
= 20 A, T
C
= 125C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
C
= 25C)
(Rated dc Voltage, T
C
= 125C)
Symbol
V
F
Value
0.9
0.8
1.0
0.9
1.0
50
Unit
V
I
R
mA
DYNAMIC CHARACTERISTICS
(Per Leg)
Capacitance
(V
R
=
−5.0
V, T
C
= 25C, Frequency = 1.0 MHz)
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
2.0%.
C
T
pF
500
ORDERING INFORMATION
Device
MBRB20200CTG
MBRB20200CTT4G
SBRB20200CTT4G
Package
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
Shipping
†
50 Units / Rail
800 Units / Tape & Reel
800 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MBRB20200CTG, SBRB20200CTT4G
100
IF, INSTANEOUS FORWARD CURRENT (AMP)
70
50
T
J
= 150C
20
T
J
= 125C
10
7
5
T
J
= 100C
10,000
T
J
= 150C
1,000
IR , REVERSE CURRENT (
A)
T
J
= 125C
100
T
J
= 100C
10
1
T
J
= 25C
2
1
0.2
0.4
0.6
0.8
v
F
, INSTANTANEOUS VOLTAGE (V)
1
0.1
T
J
= 25C
0.01
0
20
40
60
80
100
120
140
160
180 200
V
R
, REVERSE CURRENT (V)
Figure 1. Typical Forward Voltage (Per Leg)
PF(AV), AVERAGE POWER DISSIPATION (WATTS)
T
J
= 125C
10
dc
I
PK
I
AV
= 20
Figure 2. Typical Reverse Current (Per Leg)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
25
40
36
32
28
24
20
16
12
8
4
0
0
5
SQUARE
WAVE
RATED VOLTAGE
R
qJC
= 2C/W
20
15
SQUARE
WAVE
dc
10
5
10
15
20
25
30
35
0
90
100
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
110
120
130
140
T
C
, CASE TEMPERATURE (C)
150
160
Figure 3. Forward Power Dissipation
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
20
500
Figure 4. Current Derating, Case
R
qJA
=
16C/W
RATED VOLTAGE
C, CAPACITANCE (pF)
16
dc
400
T
J
= 25C
12
300
8
SQUARE
WAVE
200
4
100
0
0
25
50
75
100
125
T
A
, AMBIENT TEMPERATURE (C)
150
175
0
1
2
5
10
20
50
70 100
V
R
, REVERSE VOLTAGE (V)
Figure 5. Current Derating, Ambient
Figure 6. Typical Capacitance (Per Leg)
http://onsemi.com
3
MBRB20200CTG, SBRB20200CTT4G
PACKAGE DIMENSIONS
D
2
PAK 3
CASE 418B−04
ISSUE K
C
E
−B−
4
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
V
W
1
2
3
S
A
−T−
SEATING
PLANE
K
G
D
3 PL
M
J
H
T B
M
W
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
L
M
M
R
N
U
L
M
P
L
F
VIEW W−W
1
F
VIEW W−W
2
F
VIEW W−W
3
SOLDERING FOOTPRINT*
10.49
8.38
16.155
3.504
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
2X
2X
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
4
MBRB20200CTG, SBRB20200CTT4G
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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