IS61C5128AL-10KLI datasheet, PDF

IS61C5128AL-10KLI: DescriptionDarlington Transistors TRANSISTOR ARRAYS; Categorystorage storage; File Size436KB，19 Pages; ManufacturerISSI(Integrated Silicon Solution Inc.); Websitehttp://www.issi.com/; Environmental Compliance

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Darlington Transistors TRANSISTOR ARRAYS

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	ISSI(Integrated Silicon Solution Inc.)
Parts packaging code	SOJ
package instruction	SOJ, SOJ36,.44
Contacts	36
Reach Compliance Code	compliant
ECCN code	3A991
Factory Lead Time	6 weeks
Maximum access time	10 ns
I/O type	COMMON
JESD-30 code	R-PDSO-J36
JESD-609 code	e3
length	23.495 mm
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of terminals	36
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ36,.44
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	5 V
Certification status	Not Qualified
Maximum seat height	3.75 mm
Maximum standby current	0.01 A
Minimum standby current	2.9 V
Maximum slew rate	0.055 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Matte Tin (Sn) - annealed
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
width	10.16 mm
Base Number Matches	1

	IS61C5128AL-10KLI	IS61C5128AS-25TLI	IS61C5128AL-10KLI-TR	IS61C5128AL-10TLI	IS61C5128AS-25QLI-TR	IS61C5128AS-25HLI-TR
Description	Darlington Transistors TRANSISTOR ARRAYS	D-Sub Standard Connectors RECP FRNT MTL SHL 37	SRAM 4M (512Kx8) 10ns Async SRAM	Diodes - General Purpose, Power, Switching 100V Io/200mA BULK	SRAM 4M (512Kx8) 25ns Async SRAM	SRAM 4M (512Kx8) 25ns Async SRAM
Product Category	-	SRAM	SRAM	-	SRAM	SRAM
Manufacturer	-	ISSI(Integrated Silicon Solution Inc.)	ISSI(Integrated Silicon Solution Inc.)	-	ISSI(Integrated Silicon Solution Inc.)	ISSI(Integrated Silicon Solution Inc.)
RoHS	-	Details	Details	-	Details	Details
Memory Size	-	4 Mbit	4 Mbit	-	4 Mbit	4 Mbit
Organization	-	512 k x 8	512 k x 8	-	512 k x 8	512 k x 8
Access Time	-	25 ns	10 ns	-	25 ns	25 ns
Interface Type	-	Parallel	Parallel	-	Parallel	Parallel
Supply Voltage - Max	-	5.5 V	5.5 V	-	5.5 V	5.5 V
Supply Voltage - Min	-	4.5 V	4.5 V	-	4.5 V	4.5 V
Supply Current - Max	-	15 mA	50 mA	-	15 mA	15 mA
Minimum Operating Temperature	-	- 40 C	- 40 C	-	- 40 C	- 40 C
Maximum Operating Temperature	-	+ 85 C	+ 85 C	-	+ 85 C	+ 85 C
Mounting Style	-	SMD/SMT	SMD/SMT	-	SMD/SMT	SMD/SMT
Package / Case	-	TSOP-32	SOJ-36	-	SOP-32	sTSOP-32
Packaging	-	Tray	Reel	-	Reel	Reel
Memory Type	-	SDR	SDR	-	SDR	SDR
Factory Pack Quantity	-	117	800	-	1000	2000
Type	-	Asynchronous	Asynchronous	-	Asynchronous	Asynchronous

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