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STD1NK60-1

Description
MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size426KB,15 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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STD1NK60-1 Overview

MOSFET

STD1NK60-1 Parametric

Parameter NameAttribute value
Brand NameSTMicroelectronics
MakerSTMicroelectronics
Parts packaging codeTO-251AA
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time12 weeks
Avalanche Energy Efficiency Rating (Eas)25 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)1 A
Maximum drain current (ID)1 A
Maximum drain-source on-resistance8.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251AA
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)30 W
Maximum pulsed drain current (IDM)4 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
STD1NK60 - STD1NK60-1
STQ1HNK60R - STN1HNK60
N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223
SuperMESH™ MOSFET
Table 1: General Features
TYPE
STD1NK60
STD1NK60-1
STQ1HNK60R
STN1HNK60
Figure 1: Package
I
D
1A
1A
0.4 A
0.4 A
Pw
30 W
30 W
3W
3.3 W
V
DSS
600
600
600
600
V
V
V
V
R
DS(on)
<
<
<
<
8.5
8.5
8.5
8.5
3
1
TYPICAL R
DS
(on) = 8
EXTREMELY HIGH dv/dt CAPABILITY
ESD IMPROVED CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
TO-92 (Ammopack)
DPAK
2
3
2
1
1
2
3
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
SOT-223
IPAK
Figure 2: Internal Schematic Diagram
APPLICATIONS
LOW POWER BATTERY CHARGERS
SWITH MODE LOW POWER
SUPPLIES(SMPS)
LOW POWER, BALLAST, CFL (COMPACT
FLUORESCENT LAMPS)
Table 2: Order Codes
Part Number
STD1NK60T4
STD1NK60-1
STQ1HNK60R
STQ1HNK60R-AP
STN1HNK60
Marking
D1NK60
D1NK60
1HNK60R
1HNK60R
N1HNK60
Package
DPAK
IPAK
TO-92
TO-92
SOT-223
Packaging
TAPE & REEL
TUBE
BULK
AMMOPAK
TAPE & REEL
Rev. 3
February 2006
1/15
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