MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MCR218FP/D
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supply crowbar circuits.
•
Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity
and Stability
•
Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat
Dissipation and Durability
•
Blocking Voltage to 800 Volts
•
80 A Surge Current Capability
•
Insulated Package Simplifies Mounting
MCR218FP
Series
ISOLATED SCRs
8 AMPERES RMS
50 thru 800 VOLTS
G
A
K
CASE 221C-02
STYLE 2
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = –40 to +125°C, Gate Open)
MCR218-2FP
MCR218-4FP
MCR218-6FP
MCR218-8FP
MCR218-10FP
On-State RMS Current (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz(2)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +70°C)
Preceded and followed by rated current
Circuit Fusing (t = 8.3 ms)
Peak Gate Power (TC = +70°C, Pulse Width = 10
µs)
Average Gate Power (TC = +70°C, t = 8.3 ms)
Peak Gate Current (TC = +70°C, Pulse Width = 10
µs)
RMS Isolation Voltage (TA = 25°C, Relative Humidity
Operating Junction Temperature
Storage Temperature Range
Symbol
VDRM
VRRM
50
200
400
600
800
IT(RMS)
ITSM
I2t
PGM
PG(AV)
8
80
26
5
0.5
2
1500
–40 to +125
–40 to +125
Amps
Amps
A2s
Watts
Watt
Amps
Volts
°C
°C
Value
Unit
Volts
p
20%)
IGM
V(ISO)
TJ
Tstg
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.
Motorola Thyristor Device Data
©
Motorola, Inc. 1995
1
MCR218FP Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
Symbol
R
θJC
R
θCS
R
θJA
Max
2
2.2 (typ)
60
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Peak Forward Blocking Current
(VD = Rated VDRM, Gate Open)
Peak Reverse Blocking Current
(VR = Rated VRRM, TJ = 125°C)
Forward “On” Voltage(1)
(ITM = 16 A Peak)
Gate Trigger Current (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms)
Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms)
Gate Non-Trigger Voltage
(Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125°C)
Holding Current
(Anode Voltage = 12 Vdc)
Turn-On Time
(ITM = 8 A, IGT = 40 mAdc)
Turn-Off Time (VD = Rated VDRM,
ITM = 8 A, IR = 8 A)
TJ = 25°C
TJ = 125°C
dv/dt
TJ = 25°C
TJ = 125°C
IRRM
VTM
IGT
VGT
VGD
IH
tgt
tq
—
—
—
15
35
100
—
—
—
V/µs
Symbol
IDRM
—
—
—
—
—
—
0.2
—
—
—
—
—
1
10
—
—
16
1.5
10
2
2
1.8
25
1.5
—
30
—
Min
Typ
Max
Unit
µA
mA
mA
Volts
mA
Volts
Volts
mA
µs
µs
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, VD = Rated VDRM, Exponential Waveform)
1. Pulse Test: Pulse Width = 1 ms, Duty Cycle
p
2%.
TYPICAL CHARACTERISTICS
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
P(AV) , AVERAGE ON-STATE POWER DISSIPATION
(WATTS)
125
15
115
α
105
α
= CONDUCTION ANGLE
12
α
α
= CONDUCTION ANGLE
120°
180°
90°
dc
9
95
dc
85
75
0
α
= 30°
1
2
60°
3
90° 120°
4
180°
5
6
7
8
6
60°
α
= 30°
3
0
0
1
2
3
4
5
6
7
8
IT(AV), AVG. ON-STATE CURRENT (AMPS)
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
Figure 1. Current Derating
Figure 2. On-State Power Dissipation
2
Motorola Thyristor Device Data
MCR218FP Series
100
70
50
30
i F , INSTANTANEOUS ON-STATE FORWARD CURRENT (AMP)
20
TJ = 25°C
125°C
I TSM , PEAK SURGE CURRENT (AMP)
80
1 CYCLE
75
70
65
TC = 85°C
f = 60 Hz
60
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
55
1
2
3
4
6
8
10
NUMBER OF CYCLES
10
7
5
3
2
Figure 4. Maximum Non-Repetitive Surge Current
+I
1
0.7
0.5
0.3
0.2
–V
VRRM
REVERSE
AVALANCHE
REGION
–I
REVERSE
BLOCKING
REGION
IT
IH
IDRM
VT
FORWARD
BREAKOVER
POINT
+V
IRRM
0.1
0.4
VDRM
FORWARD
BLOCKING
REGION
1.2
2
2.8
3.6
4.4
5.2
6
v F, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 3. Maximum On-State Characteristics
Figure 5. Characteristics and Symbols
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2 0.3
0.5
1
2
3
5
10
20 30
50
t, TIME (ms)
100
200 300
500
1.0 k
2.0 k 3.0 k 5.0 k
10 k
Z
θJC(t)
= R
θJC •
r(t)
Figure 6. Thermal Response
Motorola Thyristor Device Data
3
MCR218FP Series
2
VD = 12 V
VGT , GATE TRIGGER VOLTAGE (NORMALIZED)
I GT, GATE TRIGGER CURRENT (NORMALIZED)
2
VD = 12 V
1.6
1.6
1.2
1.2
0.8
0.8
0.4
0
–60
0.4
0
–60
–40
–20
0
20
40
60
80
100
120
140
–40
–20
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Gate Trigger Current versus Temperature
2
IH , HOLDING CURRENT (NORMALIZED)
Figure 8. Gate Trigger Voltage versus Temperature
VD = 12 V
1.6
1.2
0.8
0.4
0
–60
–40
–20
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Holding Current versus Temperature
4
Motorola Thyristor Device Data
MCR218FP Series
PACKAGE DIMENSIONS
–B–
P
–T–
F
N
E
C
S
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
Z
INCHES
MIN
MAX
0.680
0.700
0.388
0.408
0.175
0.195
0.025
0.040
0.340
0.355
0.140
0.150
0.100 BSC
0.110
0.155
0.018
0.028
0.500
0.550
0.045
0.070
0.049
–––
0.270
0.290
0.480
0.500
0.090
0.120
0.105
0.115
0.070
0.090
MILLIMETERS
MIN
MAX
17.28
17.78
9.86
10.36
4.45
4.95
0.64
1.01
8.64
9.01
3.56
3.81
2.54 BSC
2.80
3.93
0.46
0.71
12.70
13.97
1.15
1.77
1.25
–––
6.86
7.36
12.20
12.70
2.29
3.04
2.67
2.92
1.78
2.28
H
–Y–
Q
1 2 3
A
STYLE 2:
PIN 1. CATHODE
2. ANODE
3. GATE
K
Z
L
G
D
3 PL
J
R
0.25 (0.010)
M
B
M
Y
CASE 221C-02
Motorola Thyristor Device Data
5
Analogue and Mixed Signal
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