MGF1801 datasheet, PDF - EEWORLD Datasheet

MGF1801: DescriptionTAPE CARRIER MICROWAVE POWER GaAs FET　; CategoryDiscrete semiconductor The transistor; File Size122KB，3 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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MGF1801 Overview

TAPE CARRIER MICROWAVE POWER GaAs FET　

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Mitsubishi
package instruction	,
Reach Compliance Code	unknow
Maximum drain current (Abs) (ID)	0.25 A
FET technology	METAL SEMICONDUCTOR
JESD-609 code	e0
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	1 W
Terminal surface	Tin/Lead (Sn/Pb)

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