HCS14MS
August 1995
Radiation Hardened
HEX Inverting Schmitt Trigger
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14
TOP VIEW
A1 1
Y1 2
A2 3
Y2 4
A3 5
Y3 6
GND 7
14 VCC
13 A6
12 Y6
11 A5
10 Y5
9 A4
8 Y4
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD(Si)
• SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
• Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-Day
(Typ)
• Dose Rate Survivability: >1 x 10
12
Rads (Si)/s
• Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
o
C to +125
o
C
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
• Input Current Levels Ii
≤
5µA at VOL, VOH
14 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP3-F14
TOP VIEW
A1
Y1
A2
Y2
A3
Y3
GND
1
2
3
4
5
6
7
14
13
12
11
10
9
8
VCC
A6
Y6
A5
Y5
A4
Y4
Description
The Intersil HCS14MS is a Radiation Hardened HEX Inverting
Schmitt trigger. A high on any input forces the output to a Low
state.
The HCS14MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS14MS is supplied in a 14 lead Ceramic flatpack Package
(K suffix) or a 14 lead SBDIP Package (D suffix).
TRUTH TABLE
INPUTS
An
OUTPUTS
Yn
H
L
Ordering Information
PART
NUMBER
HCS14DMSR
TEMPERATURE
RANGE
-55
o
C
to
+125
o
C
SCREENING
LEVEL
Intersil Class
S Equivalent
Intersil Class
S Equivalent
Sample
PACKAGE
L
H
14 Lead SBDIP
NOTE: L = Logic Level Low,
H = Logic level High
14 Lead Ceramic
Flatpack
14 Lead SBDIP
HCS14KMSR
-55
o
C to +125
o
C
HCS14D/
Sample
HCS14K/
Sample
HCS14HMSR
+25
o
C
Functional Diagram
An
Yn
+25
o
C
Sample
14 Lead Ceramic
Flatpack
Die
+25
o
C
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Spec Number
File Number
1
518752
3049.1
DB NA
Specifications HCS14MS
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output.
. . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
SBDIP Package. . . . . . . . . . . . . . . . . . . .
74
24
o
C/W
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 116
30
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.66W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . Unlimited Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . .0.0V to 30% of VCC Max.
Input High Voltage (VIH) . . . . . . . . . . . . . . 70% of VCC to VCC Min.
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
1
2, 3
1
2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1
2, 3
1
2, 3
Vt-
VCC = 4.5V
1
2, 3
VH
VCC = 4.5V
1
2, 3
Noise Immunity
Functional Test
NOTES:
1. All voltages reference to device GND.
2. For functional tests, VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
FN
VCC = 4.5V,
VIH = 0.70(VCC), (Note 2)
VIL = 0.30(VCC)
7, 8A, 8B
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
4.8
4.0
-4.8
-4.0
-
-
VCC
-0.1
VCC
-0.1
-
-
2.00
2.00
1.35
1.35
0.40
0.40
-
MAX
10
200
-
-
-
-
0.1
0.1
-
-
±0.5
±5.0
3.15
3.15
2.60
2.60
1.40
1.40
-
UNITS
µA
µA
mA
mA
mA
mA
V
V
V
V
µA
µA
V
V
V
V
V
V
-
PARAMETERS
Quiescent Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 3.15V,
IOL = 50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOL = 50µA, VIL = 1.65V
Output Current
(Sink)
Output Current
(Source)
Output Voltage Low
IOL
IOH
VOL
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
IOH = -50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOH = -50µA, VIL = 1.65V
Input Leakage
Current
Input Switch Point
IIN
VCC = 5.5V, VIN = VCC or
GND
VCC = 4.5V
Vt+
Spec Number
2
518752
Specifications HCS14MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
9
10, 11
Input to Output
TPLH
VCC = 4.5V
9
10, 11
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
MAX
18
20
22
25
UNITS
ns
ns
ns
ns
PARAMETER
Input to Output
SYMBOL
TPHL
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
Input Capacitance
SYMBOL
CPD
CONDITIONS
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
VCC = 4.5V
NOTES
1
1
1
1
1
1
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C
+25
o
C
+125
o
C
MIN
-
-
-
-
-
-
MAX
33
40
10
10
15
22
UNITS
pF
pF
pF
pF
ns
ns
CIN
Output Transition
Time
NOTE:
TTHL
TTLH
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VCC = 4.5V and 5.5V,
VIH = 0.70(VCC),
VIL = 0.20(VCC), IOL = 50µA
VCC = 4.5V and 5.5V,
VIH = 0.70(VCC),
VIL = 0.20(VCC), IOH = -50µA
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.20(VCC), (Note 3)
VCC = 4.5V
VCC = 4.5V
200K RAD LIMITS
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
4.0
-4.0
-
MAX
0.2
-
-
0.1
UNITS
mA
mA
mA
V
PARAMETERS
Quiescent Current
Output Current (Sink)
Output Current (Source)
Output Voltage Low
SYMBOL
ICC
IOL
IOH
VOL
Output Voltage High
VOH
+25
o
C
VCC
-0.1
-
-
2
2
-
V
Input Leakage Current
Noise Immunity Functional Test
Input to Output
IIN
FN
TPHL
TPLH
+25
o
C
+25
o
C
+25
o
C
+25
o
C
±5
-
21
26
µA
-
ns
ns
Spec Number
3
518752
Specifications HCS14MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
(NOTES 1, 2)
CONDITIONS
VCC = 4.5
VCC = 4.5
VCC = 4.5
200K RAD LIMITS
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
MIN
1.7
0.9
0.4
MAX
3.15
2.10
1.40
UNITS
V
V
V
PARAMETERS
Input Switch Points
SYMBOL
VT+
VT-
VH
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests, VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
GROUP B
SUBGROUP
5
5
PARAMETER
ICC
IOL/IOH
DELTA LIMIT
3µA
-15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS
GROUP A SUBGROUPS
CONFORMANCE GROUPS
Initial Test
Interim Test
PDA
Final Test
Group A (Note 1)
Subgroup B5
Subgroup B6
Group D
NOTES:
1. Alternate Group A testing in accordance with MIL-STD-883 Method 5005 may be exercised.
2. Table 5 parameters only.
TABLE 7. TOTAL DOSE IRRADIATION
TEST
CONFORMANCE
GROUPS
Group E Subgroup 2
NOTE:
1. Except FN test which will be performed 100% Go/No-Go.
METHOD
5005
PRE RAD
1, 7, 9
POST RAD
Table 4
READ AND RECORD
PRE RAD
1, 9
POST RAD
Table 4 (Note 1)
MIL-STD-883 METHOD
100% 5004
100% 5004
100% 5004
100% 5004
Sample 5005
Sample 5005
Sample 5005
Sample 5005
TESTED FOR -Q
1, 7, 9
1, 7, 9,
∆
1, 7,
∆
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11,
∆
1, 7, 9
1, 7, 9
1, 2, 3,
∆
(Note 2)
RECORDED FOR -Q
1 (Note 2)
1,
∆
(Note 2)
Spec Number
4
518752
Specifications HCS14MS
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
GROUND
1/2 VCC = 3V
±
0.5V
VCC = 6V
±
0.5V
50kHz
25kHz
STATIC BURN-IN I TEST CONDITIONS (Note 1)
2, 4, 6, 8, 10, 12
1, 3, 5, 7, 9, 11, 13
-
14
-
-
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
2, 4, 6, 8, 10, 12
7
-
1, 3, 5, 9, 11, 13, 14
-
-
DYNAMIC BURN-IN I TEST CONNECTIONS (Note 2)
-
NOTES:
1. Each pin except VCC and GND will have a resistor of 10kΩ
±
5% for static burn-in.
2. Each pin except VCC and GND will have a resistor of 1kΩ
±
5% for dynamic burn-in.
7
2, 4, 6, 8, 10, 12
14
1, 3, 5, 9, 11, 13
-
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
2, 4, 6, 8, 10, 12
GROUND
7
VCC = 5V
±
0.5V
1, 3, 5, 9, 11, 13, 14
NOTE: Each pin except VCC and GND will have a resistor of 47k
Ω ±
5% for irradiation testing.
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number
5
518752
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