NTD23N03R
Power MOSFET
23 A, 25 V, N−Channel DPAK
Features
•
•
•
•
•
Planar HD3e Process for Fast Switching Performance
Low R
DS(on)
to Minimize Conduction Loss
Low C
iss
to Minimize Driver Loss
Low Gate Charge
Optimized for High Side Switching Requirements in
High−Efficiency DC−DC Converters
•
Pb−Free Packages are Available
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise specified)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
−
Continuous
Thermal Resistance, Junction−to−Case
Total Power Dissipation @ T
C
= 25°C
Drain Current
−
Continuous @ T
C
= 25°C, Chip
−
Continuous @ T
C
= 25°C,
Limited by Package
−
Single Pulse
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Power Dissipation @ T
A
= 25°C
Drain Current
−
Continuous @ T
A
= 25°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
Total Power Dissipation @ T
A
= 25°C
Drain Current
−
Continuous @ T
A
= 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Symbol
V
DSS
V
GS
R
qJC
P
D
I
D
I
D
I
DM
R
qJA
P
D
I
D
R
qJA
P
D
I
D
T
J
, T
stg
T
L
Value
25
±20
5.6
22.3
23
17.1
40
76
1.64
4.5
110
1.14
3.8
−55
to
150
260
Unit
Vdc
Vdc
°C/W
W
A
A
A
°C/W
W
A
°C/W
W
A
°C
°C
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V
(BR)DSS
25 V
R
DS(on)
TYP
32 mW
N−CHANNEL
D
I
D
MAX
23 A
G
S
MARKING
DIAGRAMS
4
Drain
4
1 2
DPAK
CASE 369AA
(Surface Mounted)
STYLE 2
AYWW
T23
N03G
4
Drain
4
DPAK−3
CASE 369D
(Straight Lead)
STYLE 2
AYWW
T23
N03G
1 2 3
Gate Drain Source
T23N03
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
3
2
1
3
Drain
Gate
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended pad
size.
1
2
3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2009
March, 2009
−
Rev. 5
1
Publication Order Number:
NTD23N03R/D
NTD23N03R
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Characteristics
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250
mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc)
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
Gate−Body Leakage Current
(V
GS
=
±20
Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250
mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 4.5 Vdc, I
D
= 6 Adc)
(V
GS
= 10 Vdc, I
D
= 6 Adc)
Forward Transconductance (Note 3)
(V
DS
= 10 Vdc, I
D
= 6 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
GS
= 4.5 Vdc, I
D
= 6 Adc,
V
DS
= 10 Vdc) (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 6 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 6 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
V
SD
−
−
−
−
−
−
0.87
0.74
8.7
5.2
3.5
0.003
1.2
−
−
−
−
−
mC
Vdc
(V
GS
= 10 Vdc, V
DD
= 10 Vdc,
I
D
= 6 Adc, R
G
= 3
W)
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
−
−
−
−
−
−
−
2.0
14.9
9.9
2.0
3.76
1.7
1.6
−
−
−
−
−
−
−
nC
ns
(V
DS
= 20 Vdc, V
GS
= 0 V, f = 1 MHz)
C
iss
C
oss
C
rss
−
−
−
225
108
48
−
−
−
pF
V
GS(th)
1.0
−
−
−
−
1.8
−
50.3
32.3
13
2.0
−
60
45
−
Vdc
mV/°C
mW
V(br)
DSS
25
−
−
−
−
28
−
−
−
−
−
−
1.0
10
±100
Vdc
mV/°C
mAdc
Symbol
Min
Typ
Max
Unit
I
DSS
I
GSS
nAdc
R
DS(on)
g
FS
Mhos
Reverse Recovery Time
(I
S
= 6 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
t
rr
t
a
t
b
Q
RR
ns
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2
NTD23N03R
20
10 V
I
D
, DRAIN CURRENT (AMPS)
16
12
8
3V
4
V
GS
= 2.5 V
0
0
2
4
6
8
10
4.5 V
8V
6V
5V
20
I
D
, DRAIN CURRENT (AMPS)
4V
V
DS
≥
10 V
16
12
8
4
0
3.5 V
T
J
= 25°C
T
J
= 125°C
0
1
2
3
T
J
=
−55°C
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.20
V
GS
= 10 V
0.16
0.12
0.08
T
J
= 125°C
0.04
0
T
J
= 25°C
T
J
=
−55°C
0
4
8
12
16
20
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.20
Figure 2. Transfer Characteristics
V
GS
= 4.5 V
0.16
0.12
0.08
0.04
0
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
0
4
8
12
16
20
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.8
1.6
1.4
1.2
1
0.8
0.6
−50
10
I
D
= 6 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
10,000
Figure 4. On−Resistance versus Drain Current
and Temperature
V
GS
= 0 V
T
J
= 150°C
100
T
J
= 125°C
−25
0
25
50
75
100
125
150
0
5
10
15
20
25
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
NTD23N03R
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
400
C
iss
C, CAPACITANCE (pF)
300
C
rss
200
V
DS
= 0 V V
GS
= 0 V
T
J
= 25°C
8
V
GS
Q
T
4
Q
1
Q
2
6
C
iss
C
oss
100
C
rss
0
2
I
D
= 6 A
T
J
= 25°C
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Q
g
, TOTAL GATE CHARGE (nC)
10
5
V
GS
0 V
DS
5
10
15
20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
10
I
S
, SOURCE CURRENT (AMPS)
V
GS
= 0 V
8
6
4
T
J
= 150°C
2
T
J
= 25°C
0
0
0.2
0.4
0.6
0.8
1.0
100
V
DS
= 10 V
I
D
= 6 A
V
GS
= 10 V
t, TIME (ns)
10
t
d(off)
t
r
t
d(on)
t
f
1
1
10
R
G
, GATE RESISTANCE (W)
100
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
100
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
10
10
ms
100
ms
1 ms
10 ms
dc
10
100
1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTD23N03R
10
r(t), NORMALIZED EFFECTIVE
TRANSIENT
THERMAL RESISTANCE
D = 0.5
0.2
1
0.1
0.05
0.01
SINGLE PULSE
0.1
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
1
10
Figure 12. Thermal Response
ORDERING INFORMATION
Device
NTD23N03RG
NTD23N03R−1G
NTD23N03RT4
NTD23N03RT4G
Package
DPAK
(Pb−Free)
DPAK−3
(Pb−Free)
DPAK
DPAK
(Pb−Free)
Shipping
†
75 Units/Rail
75 Units/Rail
2500 Tape & Reel
2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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