MOSFET 900V N-Ch Q-FET advance C-Series
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Fairchild |
| Parts packaging code | TO-3P |
| package instruction | TO-3P, 3 PIN |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| Avalanche Energy Efficiency Rating (Eas) | 650 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 900 V |
| Maximum drain current (Abs) (ID) | 6.4 A |
| Maximum drain current (ID) | 6 A |
| Maximum drain-source on-resistance | 2.3 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT APPLICABLE |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 198 W |
| Maximum pulsed drain current (IDM) | 24 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT APPLICABLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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