SS2P2L, SS2P3L
www.vishay.com
Vishay General Semiconductor
Low V
F
High Current Density Surface Mount
Schottky Barrier Rectifiers
FEATURES
eSMP
®
Series
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
Available
SMP
(DO-220AA)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
E
AS
V
F
T
J
max.
Package
Diode variations
2.0 A
20 V, 30 V
50 A
11.25 mJ
0.45 V
150 °C
DO-220AA (SMP)
Single
For use in low voltage high frequency inverters,
freewheelling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case:
DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals:
Matte tin plated
J-STD-002 and JESD 22-B102
leads,
solderable
per
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave superimposed
on rated load
Non-repetitive avalanche energy at I
AS
= 1.5 A, L = 10 mH, T
J
= 25 °C
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
E
AS
dV/dt
T
J
, T
STG
SYMBOL
SS2P2L
22L
20
2.0
50
11.25
10 000
-55 to +150
SS2P3L
23L
30
V
A
A
mJ
V/μs
°C
UNIT
Revision: 18-May-17
Document Number: 88916
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SS2P2L, SS2P3L
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
I
F
= 2 A
I
F
= 2 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
4.0 V, 1 MHz
SYMBOL
V
F (1)
I
R (2)
C
J
TYP.
0.45
0.38
-
9.0
130
MAX.
0.50
0.45
200
20
UNIT
V
μA
mA
pF
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
Maximum reverse current at rated V
R
Typical junction capacitance
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
≤
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
R
θJA
(1)
Typical thermal resistance
R
θJL
(1)
R
θJC
(1)
SS2P2L
115
15
20
°C/W
SS2P3L
UNIT
Note
(1)
Thermal resistance from junction to ambient and junction to lead mounted on PCB with 5.0 mm x 5.0 mm copper pad areas. R
θJL
is measured
at the terminal of cathode band. R
θJC
is measured at the top center of the body
ORDERING INFORMATION
(Example)
PREFERRED P/N
SS2P3L-M3/84A
SS2P3L-M3/85A
SS2P3LHM3/84A
(1)
SS2P3LHM3/85A
(1)
Note
(1)
Automotive grade
UNIT WEIGHT (g)
0.024
0.024
0.024
0.024
PREFERRED PACKAGE CODE
84A
85A
84A
85A
BASE QUANTITY
3000
10 000
3000
10 000
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
°C
unless otherwise noted)
2.4
50
Average Forward Rectified Current (A)
2.0
Peak Forward
Surge
Current (A)
130
140
150
40
1.6
30
1.2
20
0.8
T
L
Measured
at the Cathode Band Terminal
0.4
10
0
80
90
100
110
120
0
1
10
100
Lead Temperature (°C)
Number of Cycles at 50 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 18-May-17
Document Number: 88916
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SS2P2L, SS2P3L
www.vishay.com
Vishay General Semiconductor
1000
100
Instantaneous Forward Current (A)
10
T
J
= 150 °C
Junction Capacitance (pF)
100
1
T
J
= 25 °C
T
J
= 125 °C
0.1
0.1
10
0.3
0.5
0.7
0.9
1.1
1.3
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100 000
1000
Instantaneous Reverse Leakage
Current (μA)
T
J
= 150 °C
10 000
T
J
= 125 °C
1000
Transient Thermal Impedance (°C/W)
70
80
90
100
100
100
T
J
= 25 °C
10
10
1
0.1
10
20
30
40
50
60
1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
SMP
(DO-220AA)
Cathode Band
0.012 (0.30) REF.
0.086 (2.18)
0.074 (1.88)
0.053 (1.35)
0.041 (1.05)
0.036 (0.91)
0.024 (0.61)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.103 (2.60)
0.087 (2.20)
0.032 (0.80)
0.016 (0.40)
0.105
(2.67)
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
0.100
(2.54)
0.025 0.030
(0.635) (0.762)
0.050
(1.27)
Revision: 18-May-17
Document Number: 88916
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000