datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > Discrete semiconductor> diode> MBRH20035
PDF
Preview

MBRH20035

Description
35V 200A Silicon Schottky Rectifier in D-67 (HALF PAK) Package
CategoryDiscrete semiconductor    diode   
File Size373KB，4 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
Environmental Compliance  
Download Datasheet Parametric Compare View All

MBRH20035 Online Shopping

Suppliers Part Number Price MOQ In stock  
MBRH20035 - - View Buy Now

MBRH20035 Overview

35V 200A Silicon Schottky Rectifier in D-67 (HALF PAK) Package

MBRH20035 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Objectid8183984221
package instructionR-PUFM-X1
Reach Compliance Codecompliant
ECCN codeEAR99
YTEOL5.95
applicationPOWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.7 V
JESD-30 codeR-PUFM-X1
Maximum non-repetitive peak forward current3000 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current200 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage35 V
Maximum reverse current1000 µA
surface mountNO
technologySCHOTTKY
Terminal formUNSPECIFIED
Terminal locationUPPER

Preview

Download Datasheet
MBRH20020 thru MBRH20040R
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40 V V
RRM
• Not ESD Sensitive
D-67 Package
V
RRM
= 20 V - 40 V
I
F(AV)
= 200 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MBRH20020(R) MBRH20030(R) MBRH20035(R) MBRH20040(R)
20
14
20
-55 to 150
-55 to 150
30
21
30
-55 to 150
-55 to 150
35
25
35
-55 to 150
-55 to 150
40
28
40
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current
(per pkg)
Peak forward surge current
Maximum instantaneous
forward voltage
Maximum instantaneous
reverse current at rated DC
blocking voltage
Symbol
I
F(AV)
I
FSM
V
F
I
R
Conditions
T
C
= 125 °C
t
p
= 8.3 ms, half sine
I
FM
= 200 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 150 °C
MBRH20020(R) MBRH20030(R) MBRH20035(R) MBRH20040(R)
200
3000
0.70
1
10
50
0.35
200
3000
0.70
1
10
50
0.35
200
3000
0.70
1
10
50
0.35
200
3000
0.70
1
10
50
0.35
Unit
A
A
V
mA
Thermal characteristics
Thermal resistance, junction-
case
R
ΘJC
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1

MBRH20035 Related Products

MBRH20035 MBRH20020 MBRH20040R
Description 35V 200A Silicon Schottky Rectifier in D-67 (HALF PAK) Package Schottky Diodes u0026 Rectifiers SI PWR SCHOTTKY D67 20-100V 200A 20P/14R 40V 200A Silicon Schottky Rectifier in D-67 (HALF PAK) Package
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
package instruction R-PUFM-X1 R-PUFM-X1 R-PUFM-X1
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
application POWER POWER POWER
Shell connection CATHODE CATHODE ANODE
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.7 V 0.7 V 0.7 V
JESD-30 code R-PUFM-X1 R-PUFM-X1 R-PUFM-X1
Maximum non-repetitive peak forward current 3000 A 3000 A 3000 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 200 A 200 A 200 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Maximum repetitive peak reverse voltage 35 V 20 V 40 V
Maximum reverse current 1000 µA 1000 µA 1000 µA
surface mount NO NO NO
technology SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER
Objectid 8183984221 - 8183984176
YTEOL 5.95 - 5.95

Recommended Resources

Discrete component power amplifier circuit diagram

Electromechanical Control Regulated Power Supply Circuit with Simple Control Circuit

Conversion type high voltage regulated power supply

8-bit parallel-serial-parallel conversion circuit

Video amplifier for ray coincidence compensation

How to use jumper caps in circuits
Now I have a serial port [color=#ff0000](1)[/color] and want to use an external jumper cap to select which part to connect to [color=#ff0000](2)[/color] or [color=#ff0000](3)[/color]. How should I des...
xxhhzz PCB Design
Calculate engine speed using the charging signal from the battery on a diesel engine
The engine speed is 1500 rpm, the AD sampling rate is 70K, and a total of 1024 points are collected. The time domain waveform is as follows:The red circle is the interference waveform, which has a lar...
Universe12 Integrated technical exchanges
Vicor engineers take you through power solutions for tethered, aerial/underwater drones
Tethered, aerial/underwater drones These drones are powered and controlled from a ground power source via a tether. High-voltage tether transmission of 500V to 800V enables longer and thinner cables, ...
eric_wang Integrated technical exchanges
14. [Learning LPC1768 library functions] DAC experiment
DAC is a digital to analog converter (English: Digital to analog converter, English abbreviation: DAC) is a device that converts digital signals into analog signals (in the form of current, voltage or...
加勒比海盗 NXP MCU
[Linux Touch Call] If you give up the market, why shouldn’t I grab the territory?
[i=s]This post was last edited by Beifang on 2019-5-21 12:00[/i] [align=center]If you give up the market, why don’t I go and grab the territory? [/align] [align=left]1. Overview[/align] [align=left] M...
北方 RF/Wirelessly
Sensor Basics
"Sensor Fundamentals" is divided into 12 chapters. Chapter 1 discusses the theoretical basis of sensors. Chapters 2 to 11 respectively discuss resistive, inductive, capacitive, piezoelectric, photoele...
arui1999 Download Centre
Shortcut:   L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components

  1. 47ADP3R3W1RT
  2. 62GB14F2461SW
  3. DD40-636GT
  4. RDC-19220-173Y
  5. LJT06RT-11-4SA(155)
  6. DROF-B25S-OT-213
  7. 7201SY9ARE
  8. RNCF20T27.960.5%I
  9. 1N5241B-35B
  10. BZX84C28TWT/R7
  11. A1256WRDA-S-17P
  12. A3963H-4P-RD

Popular Articles

  1. Bluetooth mesh sensor platform enables OEMs to provide professional smart lighting
  2. 51 MCU-get familiar with serial port again
  3. Tsinghua AIR Research Institute releases the world's first vehicle-road collaboration dataset DAIR-V2X
  4. C&K launches RKC2 tact switch following the RK series
  5. Hikvision: The US market situation is not optimistic, and the European market has taken deeper roots in many places
  6. Using STM8 microcontroller + NTC thermistor to make a simple temperature inspection instrument
  7. OnePlus 9 series pushes stable version of OxygenOS 12
  8. The growth rate of shipments of wearable devices in China declined significantly in the third quarter
  9. Guanghong Technology: The company provides manufacturing services for brands such as Honor and Huawei.
  10. Samsung announces first computer with MRAM non-volatile magnetoresistive memory: can be used for AI computing

Technical ResourceMore

  1. Design task of data acquisition system based on ARM
  2. C9 Hundreds of Useful Examples
  3. USB interface chip MCU interface program
  4. A brief discussion on the design of 845 single-ended class A tube amplifier
  5. Three-dimensional finite element analysis of load sensor structure of four-tilt pad bearing
  6. Color Dictionary
  7. 74ls164 pdf
  8. A good example for qt beginners. You can get started quickly. Welcome to use it. Thank you for your comments.
  9. AD5933 Impedance Test Data
  10. Introduction to Calculus I - Calculus with One Variable - Kunihiko Kodaira - Turing Mathematics - Statistics Series

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号