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SiHG17N60D-GE3

Description
Precision Potentiometers 7/8"WW 10Kohms 0.25% 10turn
CategoryDiscrete semiconductor    The transistor   
File Size194KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

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SiHG17N60D-GE3 Overview

Precision Potentiometers 7/8"WW 10Kohms 0.25% 10turn

SiHG17N60D-GE3 Parametric

Parameter NameAttribute value
MakerVishay
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)165.6 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (ID)17 A
Maximum drain-source on-resistance0.34 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-247AC
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)48 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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