Aluminum Electrolytic Capacitors - Leaded 100uF 35V
Parameter Name | Attribute value |
Product Category | MOSFET |
Manufacturer | NXP |
RoHS | Details |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | TO-263-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 68 A |
Rds On - Drain-Source Resistance | 13.9 mOhms |
Vgs - Gate-Source Voltage | 20 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C |
Configuration | Single |
Packaging | Reel |
Pd - Power Dissipation | 170 W |
Factory Pack Quantity | 800 |
Transistor Type | 1 N-Channel |
Unit Weight | 0.139332 oz |