MUN5115DW1,
NSBA114TDXV6,
NSBA114TDP6
Dual PNP Bias Resistor
Transistors
R1 = 10 kW, R2 =
8
kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
(3)
R
1
Q
1
Q
2
R
2
(4)
(5)
R
1
(6)
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PIN CONNECTIONS
(2)
R
2
(1)
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25C, common for Q
1
and Q
2
, unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
−
Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
40
5
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
MARKING DIAGRAMS
6
SOT−363
CASE 419B
1
0E M
G
G
SOT−563
CASE 463A
1
0E M
G
G
SOT−963
CASE 527AD
1
MG
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
0E/T
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
MUN5115DW1T1G,
SMUN5115DW1T1G
NSBA114TDXV6T1G
NSBA114TDXV6T5G
NSBA114TDP6T5G
Package
SOT−363
SOT−563
SOT−563
SOT−963
Shipping
†
3,000/Tape & Reel
4,000/Tape & Reel
8,000/Tape & Reel
8,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
Publication Order Number:
DTA114TD/D
Semiconductor Components Industries, LLC, 2012
September, 2012
−
Rev. 0
T
MUN5115DW1, NSBA114TDXV6, NSBA114TDP6
THERMAL CHARACTERISTICS
Characteristic
MUN5115DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction to Ambient
MUN5115DW1 (SOT−363) BOTH JUNCTION HEATED
(Note 3)
Total Device Dissipation
T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
NSBA114TDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction to Ambient
NSBA114TDXV6 (SOT−563) BOTH JUNCTION HEATED
(Note 3)
Total Device Dissipation
T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
NSBA114TDP6 (SOT−963) ONE JUNCTION HEATED
Total Device Dissipation
T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction to Ambient
NSBA114TDP6 (SOT−963) BOTH JUNCTION HEATED
(Note 3)
Total Device Dissipation
T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
1.
2.
3.
4.
5.
FR−4 @ Minimum Pad.
FR−4 @ 1.0
1.0 Inch Pad.
Both junction heated values assume total power is sum of two equally powered channels.
FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
(Note 4)
(Note 5)
(Note 4)
(Note 5)
(Note 4)
(Note 5)
P
D
339
408
2.7
3.3
369
306
−55
to +150
MW
mW/C
C/W
(Note 4)
(Note 5)
(Note 4)
(Note 5)
(Note 4)
(Note 5)
P
D
231
269
1.9
2.2
540
464
MW
mW/C
C/W
(Note 1)
(Note 1)
(Note 1)
P
D
500
4.0
250
−55
to +150
mW
mW/C
C/W
C
(Note 1)
(Note 1)
(Note 1)
P
D
357
2.9
350
mW
mW/C
C/W
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
P
D
250
385
2.0
3.0
493
325
188
208
−55
to +150
mW
mW/C
C/W
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
P
D
187
256
1.5
2.0
670
490
mW
mW/C
C/W
Symbol
Max
Unit
R
qJA
R
qJA
R
qJL
C/W
T
J
, T
stg
C
R
qJA
R
qJA
T
J
, T
stg
R
qJA
R
qJA
T
J
, T
stg
C
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2
MUN5115DW1, NSBA114TDXV6, NSBA114TDP6
ELECTRICAL CHARACTERISTICS
(T
A
= 25C, common for Q
1
and Q
2
, unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
Collector-Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 6)
(I
C
= 2.0 mA, I
B
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 6)
(I
C
= 5.0 mA, V
CE
= 10 V)
Collector-Emitter Saturation Voltage (Note 6)
(I
C
= 10 mA, I
B
= 0.3 mA)
Input Voltage (Off)
(V
CE
= 5.0 V, I
C
= 100
mA)
Input Voltage (On)
(V
CE
= 0.2 V, I
C
= 10 mA)
Output Voltage (On)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (Off)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
Input Resistor
Resistor Ratio
6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle
2%.
h
FE
V
CE(sat)
V
i(off)
V
i(on)
V
OL
V
OH
R1
R
1
/R
2
160
−
−
−
−
4.9
7.0
−
250
−
0.6
1.4
−
−
10
−
−
0.25
−
−
0.2
−
13
−
V
Vdc
Vdc
Vdc
Vdc
kW
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
−
−
−
50
50
−
−
−
−
−
100
500
0.9
−
−
nAdc
nAdc
mAdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
400
P
D
, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
−50
−25
0
25
50
75
100
125
150
(1) (2) (3)
(1) SOT−363; 1.0
1.0 Inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm
2
, 1 oz. Copper Trace
AMBIENT TEMPERATURE (C)
Figure 1. Derating Curve
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3
MUN5115DW1, NSBA114TDXV6, NSBA114TDP6
TYPICAL CHARACTERISTICS
MUN5115DW1, NSBA114TDXV6
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
1
1000
75C
h
FE
, DC CURRENT GAIN
75C
0.1
−25C
0.01
25C
T
A
=
−25C
100
25C
I
C
/I
B
= 10
10
V
CE
= 10 V
1
0.001
0
20
40
30
10
I
C
, COLLECTOR CURRENT (mA)
50
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
vs. I
C
10
C
ob
, OUTPUT CAPACITANCE (pF)
8
7
6
5
4
3
2
1
0
0
10
20
30
40
V
R
, REVERSE VOLTAGE (V)
50
I
C
, COLLECTOR CURRENT (mA)
9
f = 10 kHz
l
E
= 0 A
T
A
= 25C
Figure 3. DC Current Gain
100
75C
10
25C
1
0.1
0.01
V
O
= 5 V
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (V)
8
9
10
T
A
=
−25C
0.001
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
10
V
O
= 0.2 V
V
in
, INPUT VOLTAGE (V)
T
A
=
−25C
1
75C
25C
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
50
Figure 6. Input Voltage vs. Output Current
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4
MUN5115DW1, NSBA114TDXV6, NSBA114TDP6
TYPICAL CHARACTERISTICS
NSBA114TDP6
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
1
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
1000
150C
25C
25C
0.1
150C
100
−55C
10
V
CE
= 10 V
−55C
0.01
0
10
20
30
40
50
1
1
10
I
C
, COLLECTOR CURRENT (mA)
100
I
C
, COLLECTOR CURRENT (mA)
Figure 7. V
CE(sat)
vs. I
C
7
C
ob
, OUTPUT CAPACITANCE (pF)
6
5
4
3
2
1
0
0
10
20
30
40
50
100
I
C
, COLLECTOR CURRENT (mA)
10
1
0.1
0.01
Figure 8. DC Current Gain
f = 10 kHz
I
E
= 0 A
T
A
= 25C
150C
−55C
25C
V
O
= 5 V
0
1
2
3
4
5
6
7
8
0.001
V
R
, REVERSE VOLTAGE (V)
V
in
, INPUT VOLTAGE (V)
Figure 9. Output Capacitance
100
Figure 10. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)
10
25C
−55C
1
150C
V
O
= 0.2 V
0
10
20
30
40
50
0.1
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
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