BSS169-H6327 datasheet, PDF - EEWORLD Datasheet

BSS169-H6327: DescriptionMOSFET N-Ch 100V 90mA SOT-23-3; Categorysemiconductor Discrete semiconductor; File Size492KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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MOSFET N-Ch 100V 90mA SOT-23-3

Parameter Name	Attribute value
Product Category	MOSFET
Manufacturer	Infineon
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	90 mA
Rds On - Drain-Source Resistance	12 Ohms
Vgs th - Gate-Source Threshold Voltage	- 2.9 V
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	2.8 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Qualification	AEC-Q100
Channel Mode	Depletion
Packaging	Cut Tape
Packaging	Reel
Fall Time	27 ns
Forward Transconductance - Min	0.1 S
Height	1.1 mm
Length	2.9 mm
Pd - Power Dissipation	360 mW
Product	MOSFET Small Signal
Rise Time	2.7 ns
Factory Pack Quantity	3000
Transistor Type	1 N-Channel
Type	SIPMOS Small Signal Transistor
Typical Turn-Off Delay Time	11 ns
Typical Turn-On Delay Time	2.9 ns
Width	1.3 mm
Unit Weight	0.000282 oz

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