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AS6C2008-55STINTR

Description
SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM
Categorystorage    storage   
File Size3MB,13 Pages
ManufacturerAlliance Memory
Environmental Compliance
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AS6C2008-55STINTR Overview

SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM

AS6C2008-55STINTR Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerAlliance Memory
Reach Compliance Codecompliant
Factory Lead Time8 weeks
Memory IC TypeSTANDARD SRAM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
February 2007
®
AS6C2008
Rev. 1.1
256K X 8 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The AS6C2008 is a 2,097,152-bit low power CMOS
static random access memory organized as 262,144
words by 8 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The AS6C2008 is well designed for very low power
system applications, and particularly well suited for
battery back-up nonvolatile memory application.
The AS6C2008 operates from a single power
supply of 2.7V ~ 3.6V
.
FEATURES
Access time : 55ns
Low power consumption:
Operating current :20mA (TYP.)
Standby current : 20mA(TYP.)L Version
A (TYP.) LL-version
Single 2.7V ~ 3.6V power supply
Fully static operation
Tri-state output
Data retention voltage : 1.5V (MIN.)
All Products ROHS Compliant
Package : 32-pin 450 mil SOP
32-pin 8mm x 20mm TSOP-I
32-pin 8mm x 13.4mm sTSOP
36-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Family
Operating
Temperature
Vcc Range
Speed
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc,TYP.)
AS6C2008 (I)
-40 ~ 85ºC
2
.7 ~ 3.6V
55ns
20µA(L)/1µA(LL)
20mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
A0 - A17
DQ0 – DQ7
CE#, CE2
WE#
OE#
V
CC
V
SS
NC
Vcc
Vss
A0-A17
DECODER
256Kx8
MEMORY ARRAY
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
CE#
CE2
WE#
OE#
CONTROL
CIRCUIT
10/February/07, v.1.0
Alliance Memory Inc.
Page 1 of 13

AS6C2008-55STINTR Related Products

AS6C2008-55STINTR AS6C2008-55BINTR AS6C2008-55SINTR
Description SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM SRAM 2M, 2.7-3.6V, 55ns 256K x 8 Asynch SRAM SRAM 2M, 2.7-3.6V, 55ns 256K x 8 Asynch SRAM
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Reach Compliance Code compliant compliant compliant
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Factory Lead Time 8 weeks 8 weeks -
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