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EMX1DXV6T5

Description
Bipolar Transistors - BJT 100mA 60V Dual NPN
CategoryDiscrete semiconductor    The transistor   
File Size48KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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EMX1DXV6T5 Overview

Bipolar Transistors - BJT 100mA 60V Dual NPN

EMX1DXV6T5 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionLEAD FREE, CASE 463A-01, 6 PIN
Contacts6
Manufacturer packaging code463A-01
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-F6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)180 MHz
EMX1DXV6T1,
EMX1DXV6T5
Preferred Devices
Dual NPN General Purpose
Amplifier Transistor
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-563 package which is
designed for low power surface mount applications, where board
space is at a premium.
Features
http://onsemi.com
Reduces Board Space
High h
FE
, 210−460 (Typical)
Low V
CE(sat)
, < 0.5 V
These are Pb−Free Devices
DUAL NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
(6)
(5)
(4)
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current − Continuous
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
Value
60
50
7.0
100
Unit
Vdc
Vdc
Vdc
mAdc
(1)
(2)
(3)
Tr
1
Tr
2
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance −
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance −
Junction-to-Ambient
Junction and Storage
Temperature Range
Symbol
P
D
357 (Note 1)
2.9 (Note 1)
R
qJA
350 (Note 1)
mW
mW/°C
°C/W
Max
Unit
6
1
SOT−563
CASE 463A
STYLE 1
Symbol
P
D
Max
500 (Note 1)
4.0 (Note 1)
Unit
mW
mW/°C
°C/W
°C
3X M
G
G
1
3X = Specific Device Code
M = Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
R
qJA
T
J
, T
stg
250 (Note 1)
−55 to +150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2005
1
November, 2005 − Rev. 1
Publication Order Number:
EMX1DXV6T1/D
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