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FDN306P
December 2001
FDN306P
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Features
•
–2.6 A, –12 V.
R
DS(ON)
= 40 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 50 mΩ @ V
GS
= –2.5 V
R
DS(ON)
= 80 mΩ @ V
GS
= –1.8 V
Applications
•
Battery management
•
Load switch
•
Battery protection
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
•
SuperSOT
TM
-3 provides low R
DS(ON)
and 30% higher
power handling capability than SOT23 in the same
footprint
D
D
S
SuperSOT -3
TM
G
T
A
=25
o
C unless otherwise noted
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
Parameter
Ratings
–12
±8
(Note 1a)
Units
V
V
A
W
°C
–
2.6
–
10
0.5
0.46
–55 to +150
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
306
Device
FDN306P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
2001
Fairchild Semiconductor Corporation
FDN306P Rev D (W)
FDN306P
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= –250
µA
Min
–12
Typ
Max Units
V
Off Characteristics
I
D
= –250
µA,Referenced
to 25°C
V
DS
= –10 V,
V
GS
= 8 V,
V
GS
= –8 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
I
D
= –250
µA
–0.4
–0.6
2.5
30
39
54
40
–10
10
1138
454
302
11
10
38
35
V
DS
= –6 V,
V
GS
= –4.5 V
I
D
= –2.6 A,
12
2
3
–0.42
(Note 2)
–3
–1
100
–100
–1.5
mV/°C
µA
nA
nA
V
mV/°C
40
50
80
54
mΩ
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= –250
µA,Referenced
to 25°C
V
GS
= –4.5 V, I
D
= –2.6 A
V
GS
= –2.5 V, I
D
= –2.3 A
I
D
= –1.8 A
V
GS
= –1.8V,
V
GS
= –4.5 V, I
D
= –2.6A , T
J
=125°C
V
GS
= –4.5 V, V
DS
= –5 V
V
DS
= –5 V,
I
D
= –2.6 A
I
D(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
A
S
pF
pF
pF
20
20
61
56
17
ns
ns
ns
ns
nC
nC
nC
A
V
Dynamic Characteristics
V
DS
= –6 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –6 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
Ω
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= –0.42
–0.6
–1.2
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 250°C/W when mounted on a
0.02 in
2
pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDN306P Rev D W)
FDN306P
Typical Characteristics
20
V
GS
= -4.5V
-3.0V
2.2
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-2.5V
-2.0V
2
1.8
-I
D
, DRAIN CURRENT (A)
15
V
GS
= -1.8V
-2.0V
-1.8V
10
1.6
1.4
1.2
1
0.8
-2.5V
-3.0V
-3.5V
-4.5V
5
-1.5V
0
0
1
2
3
4
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
5
10
-I
D
, DIRAIN CURRENT (A)
15
20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.12
1.4
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.3
1.2
1.1
1
0.9
0.8
-50
-25
0
25
50
75
100
o
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= -2.6A
V
GS
= -4.5V
I
D
= -1.3A
0.1
0.08
0.06
T
A
= 125
o
C
0.04
T
A
= 25
o
C
0.02
1
2
3
4
5
125
150
T
J
, JUNCTION TEMPERATURE ( C)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
20
V
DS
= -5V
25 C
-125
o
C
o
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V
GS
= 0V
1
-I
S
, REVERSE DRAIN CURRENT (A)
T
A
= -55
o
C
-I
D
, DRAIN CURRENT (A)
15
T
A
= 125
o
C
25
o
C
-55
o
C
0.1
10
0.01
5
0.001
0
0.5
1
1.5
2
2.5
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN306P Rev D W)
FDN306P
Typical Characteristics
5
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -2.6A
4
V
DS
= -4V
2000
-6V
f = 1 MHz
V
GS
= 0 V
1600
CAPACITANCE (pF)
-8V
C
ISS
3
1200
2
800
C
OSS
1
400
C
RSS
0
0
3
6
9
12
15
0
0
3
6
9
12
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
30
Figure 8. Capacitance Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
-I
D
, DRAIN CURRENT (A)
R
DS(ON)
LIMIT
10
1ms
1
V
GS
= -4.5V
SINGLE PULSE
R
θJA
= 270
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10
100
DC
10ms
100ms
1s
100µs
25
20
15
10
5
0
0.001
SINGLE PULSE
R
θJA
= 270°C/W
T
A
= 25°C
0.1
0.01
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL
RESISTANCE
D = 0.5
0.2
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 270 C/W
P(pk)
t
1
SINGLE PULSE
o
0.1
0.1
0.05
0.02
0.01
0.01
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
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