GAPM8814 datasheet, PDF - EEWORLD Datasheet

GAPM8814: Description300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET; Categorysemiconductor Discrete semiconductor; File Size439KB，10 Pages; ManufacturerETC

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GAPM8814 Overview

300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

Parameter Name	Attribute value
Number of terminals	3
Minimum breakdown voltage	60 V
Processing package description	GREEN, PLASTIC PACKAGE-3
Lead-free	Yes
EU RoHS regulations	Yes
China RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE Tin
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	Single WITH BUILT-IN diode
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	Universal small signal
Maximum leakage current	0.3000 A
feedback capacitor	3 pF
Maximum drain on-resistance	3 ohm

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