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GA4F4Z

Description
RESISTOR BUILT-IN TYPE NPN TRANSISTOR
File Size339KB,22 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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GA4F4Z Overview

RESISTOR BUILT-IN TYPE NPN TRANSISTOR

DATA SHEET
SILICON TRANSISTOR
GA4xxx
RESISTOR BUILT-IN TYPE NPN TRANSISTOR
FEATURES
Compact package
Resistors built-in type
Complementary to GN4xxx
#
PACKAGE DRAWING (Unit: mm)
0.3
+0.1
−0
Marking
0.15
+0.1
−0.05
3
1.25
±
0.1
2.1
±
0.1
ORDERING INFORMATION
PART NUMBER
GA4xxx
PACKAGE
SC-70
0 to 0.1
2
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Note
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
I
C(pulse)
P
T
T
j
T
stg
60
50
5
0.1
0.2
0.2
150
–55 to +150
V
V
V
A
A
W
°C
°C
2
R
1
0.65
0.3
+0.1
−0
0.65
0.3
0.9
±
0.1
2.0
±
0.2
#
EQUIVALENT CIRCUIT
3
#
PIN CONNECTION
1: Emitter
2: Base
3: Collector
Note
PW
10 ms, Duty Cycle
50%
PART NUMBER
GA4A4M
GA4F4M
GA4L4M
GA4L3M
GA4L3N
GA4L3Z
GA4A3Q
GA4A4P
GA4F4N
MARK
AA1
AB1
AC1
AD1
AE1
AF1
AG1
AH1
AJ1
R
1
10.0
22.0
47.0
4.7
4.7
4.7
1.0
10.0
22.0
10.0
47.0
47.0
R
2
10.0
22.0
47.0
4.7
10.0
UNIT
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
PART NUMBER
GA4L4L
GA4A4Z
GA4F4Z
GA4L4Z
GA4F3M
GA4F3P
GA4F3R
GA4A4L
GA4L4K
R
2
1
MARK
AK1
AL1
AM1
AN1
AP1
AQ1
AR1
AS1
AT1
R
1
47.0
10.0
22.0
47.0
2.2
2.2
2.2
10.0
47.0
R
2
22.0
UNIT
kΩ
kΩ
kΩ
kΩ
2.2
10.0
47.0
4.7
10.0
kΩ
kΩ
kΩ
kΩ
kΩ
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16494EJ2V0DS00 (2nd edition)
Date Published February 2003 NS CP(K)
Printed in Japan
The mark
#
shows major revised points.
2002

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