BFR183E6327 datasheet, PDF - EEWORLD Datasheet

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BFR183E6327: DescriptionRF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,; CategoryDiscrete semiconductor The transistor; File Size608KB，6 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BFR183E6327 Overview

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,

BFR183E6327 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE, TR7:3
Maximum collector current (IC)	0.065 A
Collector-based maximum capacity	0.57 pF
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
Minimum DC current gain (hFE)	70
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.45 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	8000 MHz
Base Number Matches	1

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BFR183

Low Noise Silicon Bipolar RF Transistor

•

For low noise, high-gain broadband amplifiers at

collector currents from 2 mA to 30 mA

•

= 8 GHz,

min

= 0.9 dB at 900 MHz

•

Pb-free (RoHS compliant) package

•

Qualification report according to AEC-Q101 available

ESD

(

lectro

tatic

ischarge) sensitive device, observe handling precaution!

Type

BFR183

Parameter

Marking

RHs

Pin Configuration

1=B

2=E

Symbol

CEO

CES

CBO

EBO

tot

Stg

Symbol

thJS

3=C

Value

Package

SOT23

Unit

Maximum Ratings

= 25 °C, unless otherwise specified

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

≤

60 °C

450

150

-55 ... 150

Value

°C

Junction temperature

Storage temperature

Thermal Resistance

Parameter

Unit

Junction - soldering point

For

200

K/W

measured on the collector lead at the soldering point to the pcb

the definition of

thJS

please refer to Application Note AN077 (Thermal Resistance Calculation)

2014-04-03

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