JANTXV2N7228 datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> JANTXV2N7228

Preview

JANTXV2N7228: DescriptionPower Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size579KB，3 Pages; ManufacturerSemicoa; Websitehttp://www.snscorp.com/Semicoa.htm

Download Datasheet Parametric Compare View All

JANTXV2N7228 Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	JANTXV2N7228	-	-	View	Buy Now

JANTXV2N7228 Overview

Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3

JANTXV2N7228 Parametric

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, S-XSFM-P3
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	750 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	12 A
Maximum drain-source on-resistance	0.515 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	S-XSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	48 A
Certification status	Not Qualified
Guideline	MIL-19500
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

Preview

Download Datasheet

View All

SCF2N7228T1

JANTX2N7228

JANTXV2N7228

POWER MOSFET

FOR RUGGED ENVIRONMENTS

DESCRIPTION

TO-254AA

REF: MIL-PRF-19500/592



N-Channel



500 Volt



< 0.415 Ohms



12 Amp

SEMICOA’s MOSFET technology is designed for rugged environments providing excellent long term reliabil-

ity. SEMICOA’s long heritage providing military grade technology and packaging allows these devices to be

used for ground based telecommunications, vehicles, ships, weapon systems and other application where fail-

ure is not an option.

FEATURES



Available in JANTX and JANTXV equivalent levels

RDS

(ON)

< 415 mΩ

Simple Drive Requirements

Low Gate Charge



Ease of Paralleling

Hermetically Sealed

Die Available

ABSOLUTE MAXIMUM RATINGS

PARAMETER

l

D

@ V

GS

= 10 V, T

C

= 25° C

l

D

@ V

GS

= 10 V, T

C

= 100° C

IDM

PD @ TC = 25° C

Continuous Drain Current

Pulsed Drain Current

(1)

Max Power Dissipation

Linear Derating Factor

VGS

EAS

IAR

TJ

TSTG

Gate to Source Voltage

Single Pulse Avalanche Energy

(2)

Avalanche Current

(1)

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

For footnotes refer to the last page

12

8.0

48

150

1.2

±20

750

12

-55 to 150

300

9.3 typical

W

W/°C

V

mJ

A

°C

g

A

UNITS

333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900

www.semicoa.com

sales@semicoa.com

Rev. 1

JANTXV2N7228 Related Products

	JANTXV2N7228	JANTX2N7228	SCF2N7228T1
Description	Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3	Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3	Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3
package instruction	FLANGE MOUNT, S-XSFM-P3	FLANGE MOUNT, S-XSFM-P3	FLANGE MOUNT, S-XSFM-P3
Reach Compliance Code	unknown	compliant	unknown
Avalanche Energy Efficiency Rating (Eas)	750 mJ	750 mJ	750 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	500 V	500 V
Maximum drain current (ID)	12 A	12 A	12 A
Maximum drain-source on-resistance	0.515 Ω	0.515 Ω	0.515 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA	TO-254AA	TO-254AA
JESD-30 code	S-XSFM-P3	S-XSFM-P3	S-XSFM-P3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	SQUARE	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	48 A	48 A	48 A
surface mount	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1
Certification status	Not Qualified	Not Qualified	-
Guideline	MIL-19500	MIL-19500	-

Recommended Resources

Triangular wave oscillator and output waveform using two operational amplifiers

AN7168 power amplifier circuit diagram

TDA7241 power amplifier circuit

Peak current feedback circuit

Frequency converter speed regulating circuit with main speed setting box and linkage setting operating box

Computer motherboard circuit diagram 820 1_18

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components