MJD2955T4 datasheet, PDF - EEWORLD Datasheet

MJD2955T4: Description10 A, 60 V, NPN, Si, POWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size115KB，6 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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10 A, 60 V, NPN, Si, POWER TRANSISTOR

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	SMALL OUTLINE, R-PDSO-G2
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	5
JESD-30 code	R-PDSO-G2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power consumption environment	20 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	2 MHz
Maximum off time (toff)	3000 ns
VCEsat-Max	8 V

	MJD2955T4	MJD3055T4	MJD3055
Description	10 A, 60 V, NPN, Si, POWER TRANSISTOR	10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252AA	10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252AA
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )
package instruction	SMALL OUTLINE, R-PDSO-G2	SMALL OUTLINE, R-PDSO-G2	SMALL OUTLINE, R-PDSO-G2
Reach Compliance Code	unknow	unknow	unknow
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	10 A	10 A	10 A
Collector-emitter maximum voltage	60 V	60 V	60 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	5	5	5
JESD-30 code	R-PDSO-G2	R-PDSO-G2	R-PDSO-G2
Number of components	1	1	1
Number of terminals	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	PNP	PNP
Maximum power consumption environment	20 W	20 W	20 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	2 MHz	2 MHz	2 MHz
Maximum off time (toff)	3000 ns	3000 ns	3000 ns
VCEsat-Max	8 V	8 V	8 V
ECCN code	EAR99	EAR99	-

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