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MJE13003

Description
1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size180KB,4 Pages
ManufacturerMOSPEC
Websitehttp://www.mospec.com.tw/eng/index.html
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MJE13003 Overview

1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB

MJE13003 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current1.5 A
Maximum Collector-Emitter Voltage400 V
Processing package descriptionPlastic, TO-220, 3 PIN
stateDISCONTINUED
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingtin lead
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
Transistor component materialssilicon
Transistor typeuniversal power supply
Minimum DC amplification factor8
Rated crossover frequency5 MHz

MJE13003 Related Products

MJE13003 13003BR
Description 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Number of terminals 3 3
Transistor polarity NPN NPN
Maximum collector current 1.5 A 1.5 A
Maximum Collector-Emitter Voltage 400 V 400 V
Processing package description Plastic, TO-220, 3 PIN Plastic, TO-220, 3 PIN
state DISCONTINUED DISCONTINUED
packaging shape Rectangle Rectangle
Package Size Flange mounting Flange mounting
Terminal form THROUGH-hole THROUGH-hole
terminal coating tin lead tin lead
Terminal location single single
Packaging Materials Plastic/Epoxy Plastic/Epoxy
structure single single
Number of components 1 1
Transistor component materials silicon silicon
Transistor type universal power supply universal power supply
Minimum DC amplification factor 8 8
Rated crossover frequency 5 MHz 5 MHz

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