RF MOSFET Transistors BULK TNS-RFUH
| Parameter Name | Attribute value |
| Product Category | RF MOSFET Transistors |
| Manufacturer | NXP |
| RoHS | Details |
| Transistor Polarity | N-Channel |
| Id - Continuous Drain Current | 25 A |
| Vds - Drain-Source Breakdown Voltage | 65 V |
| Rds On - Drain-Source Resistance | 150 mOhms |
| Technology | Si |
| Gain | 13.5 dB |
| Output Power | 300 W |
| Maximum Operating Temperature | + 150 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-262 A1 |
| Packaging | Tube |
| Channel Mode | Enhancement |
| Configuration | Dual |
| Height | 5.77 mm |
| Length | 34.17 mm |
| Minimum Operating Temperature | - 65 C |
| Operating Frequency | 225 MHz |
| Pd - Power Dissipation | 500 W |
| Factory Pack Quantity | 60 |
| Type | RF Power MOSFET |
| Vgs - Gate-Source Voltage | +/- 20 V |
| Vgs th - Gate-Source Threshold Voltage | 4.5 V |
| Width | 10.29 mm |
| Unit Weight | 0.001058 oz |
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