Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 11 X 8 MM, VFBGA-54
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Micron Technology |
Parts packaging code | BGA |
package instruction | 11 X 8 MM, VFBGA-54 |
Contacts | 54 |
Reach Compliance Code | _compli |
ECCN code | EAR99 |
access mode | FOUR BANK PAGE BURST |
Maximum access time | 7 ns |
Other features | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 104 MHz |
I/O type | COMMON |
interleaved burst length | 1,2,4,8 |
JESD-30 code | R-PBGA-B54 |
JESD-609 code | e0 |
length | 11 mm |
memory density | 268435456 bi |
Memory IC Type | SYNCHRONOUS DRAM |
memory width | 16 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 54 |
word count | 16777216 words |
character code | 16000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 16MX16 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | VFBGA |
Encapsulate equivalent code | BGA54,9X9,32 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
Peak Reflow Temperature (Celsius) | 235 |
power supply | 1.8/2.5,2.5 V |
Certification status | Not Qualified |
refresh cycle | 8192 |
Maximum seat height | 1 mm |
self refresh | YES |
Continuous burst length | 1,2,4,8,FP |
Maximum standby current | 0.0005 A |
Maximum slew rate | 0.155 mA |
Maximum supply voltage (Vsup) | 2.7 V |
Minimum supply voltage (Vsup) | 2.3 V |
Nominal supply voltage (Vsup) | 2.5 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal surface | Tin/Lead/Silver (Sn/Pb/Ag) |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | 30 |
width | 8 mm |