Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
Features
http://onsemi.com
500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range
−
1.8 V to 43 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Peak Power
−
225 W (8 x 20
ms)
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
SOD−123
CASE 425
STYLE 1
1
Cathode
2
Anode
MARKING DIAGRAM
1
xxx M
G
G
260C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V−0
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20
ms
(Note 1)
@ T
L
25C
Total Power Dissipation on FR−5 Board,
(Note 2) @ T
L
= 75C
Derated above 75C
Thermal Resistance, (Note 3)
Junction−to−Ambient
Thermal Resistance, (Note 3)
Junction−to−Lead
Junction and Storage Temperature Range
Symbol
P
pk
P
D
Max
225
Unit
W
xxx = Device Code (Refer to page 2)
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MMSZ4xxxET1G
Package
SOD−123
(Pb−Free)
SOD−123
(Pb−Free)
SOD−123
(Pb−Free)
Shipping
†
3,000 /
Tape & Reel
3,000 /
Tape & Reel
10,000 /
Tape & Reel
500
6.7
340
150
−55
to
+150
mW
mW/C
C/W
SZMMSZ4xxxET1G
MMSZ4xxxET3G
R
qJA
R
qJL
T
J
, T
stg
C/W
C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 11.
2. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.
3. Thermal Resistance measurement obtained via infrared Scan Method.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
January, 2012
−
Rev. 6
1
Publication Order Number:
MMSZ4678ET1/D
MMSZ4xxxET1G Series, SZMMSZ4xxxET1G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless
otherwise noted, V
F
= 0.95 V Max. @ I
F
= 10 mA)
Symbol
V
Z
I
ZT
I
R
V
R
I
F
V
F
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Current
Reverse Leakage Current @ V
R
Reverse Voltage
Forward Current
Forward Voltage @ I
F
V
Z
V
R
I
R
V
F
I
ZT
V
I
F
I
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted, V
F
= 0.9 V Max. @ I
F
= 10 mA)
Zener Voltage
(Note 1)
Device
Marking
CF8
CG3
CG7
CG8
CG9
CH1
CH2
CH3
CH7
CH9
CJ2
CJ3
CJ4
CJ6
CK1
CK3
CK9
V
Z
(V)
Min
2.09
3.13
4.47
4.85
5.32
5.89
6.46
7.13
9.50
11.40
13.3
14.25
15.20
17.10
22.80
25.65
40.85
Nom
2.2
3.3
4.7
5.1
5.6
6.2
6.8
7.5
10
12
14
15
16
18
24
27
43
Max
2.31
3.47
4.94
5.36
5.88
6.51
7.14
7.88
10.50
12.60
14.7
15.75
16.80
18.90
25.20
28.35
45.15
@ I
ZT
mA
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
mA
4
7.5
10
10
10
10
10
10
1
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
Leakage Current
I
R
@ V
R
V
1
1.5
3
3
4
5
5.1
5.7
7.6
9.1
10.6
11.4
12.1
13.6
18.2
20.4
32.6
Device*
MMSZ4680ET1G
MMSZ4684ET1G
MMSZ4688ET1G
MMSZ4689ET1G
MMSZ4690ET1G
MMSZ4691ET1G
MMSZ4692ET1G
MMSZ4693ET1G
MMSZ4697ET1G
MMSZ4699ET1G
MMSZ4701ET1G
MMSZ4702ET1G
MMSZ4703ET1G
MMSZ4705ET1G
MMSZ4709ET1G
MMSZ4711ET1G
MMSZ4717ET1G
1. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T
L
= 30C
1C.
*Include SZ-prefix devices where applicable.
http://onsemi.com
2
MMSZ4xxxET1G Series, SZMMSZ4xxxET1G Series
TYPICAL CHARACTERISTICS
8
7
6
5
4
3
2
1
0
−1
−2
−3
V
Z
@ I
ZT
TYPICAL T
C
VALUES
100
TYPICAL T
C
VALUES
VZ, TEMPERATURE COEFFICIENT (mV/
C)
VZ, TEMPERATURE COEFFICIENT (mV/
C)
V
Z
@ I
ZT
10
2
3
4
5
6
7
8
9
10
11
12
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
V
Z
, NOMINAL ZENER VOLTAGE (V)
Figure 1. Temperature Coefficients
(Temperature Range
−
55C to +150C)
1.2
P
D
, POWER DISSIPATION (WATTS)
1.0
0.8
0.6
0.4
0.2
0
P
D
versus T
A
P
D
versus T
L
1000
Ppk , PEAK SURGE POWER (WATTS)
Figure 2. Temperature Coefficients
(Temperature Range
−
55C to +150C)
RECTANGULAR
WAVEFORM, T
A
= 25C
100
10
0
25
50
75
100
T, TEMPERATURE (C)
125
150
1
0.1
1
10
100
PW, PULSE WIDTH (ms)
1000
Figure 3. Steady State Power Derating
Figure 4. Maximum Nonrepetitive Surge Power
1000
Z ZT, DYNAMIC IMPEDANCE (
)
I
Z
= 1 mA
T
J
= 25C
I
Z(AC)
= 0.1 I
Z(DC)
f = 1 kHz
1000
IF, FORWARD CURRENT (mA)
75 V (MMSZ5267BT1G)
91 V (MMSZ5270BT1G)
100
5 mA
20 mA
10
100
10
150C
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE
100
1
0.4
0.5
75C 25C
0C
1.1
1.2
0.6
0.7
0.8
0.9
1.0
V
F
, FORWARD VOLTAGE (V)
Figure 5. Effect of Zener Voltage on
Zener Impedance
Figure 6. Typical Forward Voltage
http://onsemi.com
3
MMSZ4xxxET1G Series, SZMMSZ4xxxET1G Series
TYPICAL CHARACTERISTICS
1000
C, CAPACITANCE (pF)
0 V BIAS
1 V BIAS
100
BIAS AT
50% OF V
Z
NOM
10
T
A
= 25C
1000
I R , LEAKAGE CURRENT (
m
A)
100
10
1
0.1
0.01
+ 25C
−55C
0
10
20
30
40
50
60
70
V
Z
, NOMINAL ZENER VOLTAGE (V)
80
90
+150C
0.001
0.0001
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
0.00001
Figure 7. Typical Capacitance
100
I Z, ZENER CURRENT (mA)
100
I Z, ZENER CURRENT (mA)
T
A
= 25C
Figure 8. Typical Leakage Current
T
A
= 25C
10
10
1
1
0.1
0.1
0.01
0
2
4
6
8
V
Z
, ZENER VOLTAGE (V)
10
12
0.01
10
30
50
70
V
Z
, ZENER VOLTAGE (V)
90
Figure 9. Zener Voltage versus Zener Current
(V
Z
Up to 12 V)
100
% OF PEAK PULSE CURRENT
90
80
70
60
50
40
30
20
10
0
0
20
40
t
P
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
t
r
PEAK VALUE I
RSM
@ 8
ms
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
HALF VALUE I
RSM
/2 @ 20
ms
60
80
t, TIME (ms)
Figure 11. 8
20
ms
Pulse Waveform
http://onsemi.com
4
MMSZ4xxxET1G Series, SZMMSZ4xxxET1G Series
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
D
A
A1
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
A1
b
c
D
E
H
E
L
q
MILLIMETERS
MIN
NOM
MAX
0.94
1.17
1.35
0.00
0.05
0.10
0.51
0.61
0.71
---
---
0.15
1.40
1.60
1.80
2.54
2.69
2.84
3.56
3.68
3.86
---
---
0.25
---
10
0
MIN
0.037
0.000
0.020
---
0.055
0.100
0.140
0.010
0
INCHES
NOM
0.046
0.002
0.024
---
0.063
0.106
0.145
---
---
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
---
10
H
E
2.36
0.093
4.19
0.165
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
京公网安备 11010802033920号
EEWORLD
