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MP356

Description
35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size182KB,2 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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MP356 Overview

35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

MCC
Features
Mounting Hole For #8 Screw
Plastic Case With Metal Bottom
Any Mounting Position
Surge Rating Of 400 Amps
  

  
 
  !"#
$ %    !"#
MP3505
THRU
MP3510
35 Amp Single Phase
Bridge Rectifier
50 to 1000 Volts
MP-50
B
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
MCC
Catalog
Number
MP3505
MP351
MP352
MP354
MP356
MP358
MP3510
Device
Marking
MP3505
MP351
MP352
MP354
MP356
MP358
MP3510
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000v
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000v
C
E
G
AC
D
-
AC
+
H
A
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum Forward
Voltage Drop Per
Element
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I t Rating for Fusing
t<8.3mS
2
I
F(AV)
I
FSM
V
F
35.0A
400A
1.1V
T
C
= 55°C
8.3ms, half sine
J
I
FM
= 17.5A per
element;
T
J
= 25°C
T
J
= 25°C
T
J
= 125°C
AS
2
A
I
R
2
5µA
500µA
660
DIMENSIONS
INCHES
MIN
1.118
.432
.468
.689
.618
.193
.618
.531
MM
MIN
28.40
10.97
11.89
17.50
15.70
4.90
15.70
13.50
It
Typical Themal
R jc
Resistance Junction
3.0
to case(per element)
*Pulse test: Pulse width 300
µsec,
Duty cycle 1%
K/W
DIM
A
B
C
D
E
G
H
J
MAX
1.130
.442
.558
.728
.657
---
.657
.571
MAX
28.70
11.23
14.17
18.50
16.70
---
16.70
14.50
NOTE
www.mccsemi.com

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Description 35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
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