MMJT9435T1 datasheet, PDF - EEWORLD Datasheet

MMJT9435T1: DescriptionBipolar Transistors - BJT 3A 30V 3W PNP; CategoryDiscrete semiconductor The transistor; File Size86KB，6 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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Bipolar Transistors - BJT 3A 30V 3W PNP

Parameter Name	Attribute value
Brand Name	ON Semiconductor
Is it lead-free?	Contains lead
Maker	ON Semiconductor
Parts packaging code	TO-261AA
package instruction	TO-261, 4 PIN
Contacts	4
Manufacturer packaging code	0.0318
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	90
JEDEC-95 code	TO-261AA
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Humidity sensitivity level	3
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	PNP
Maximum power dissipation(Abs)	3 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
Transistor component materials	SILICON
Nominal transition frequency (fT)	110 MHz

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