MOSFET 20V P-Ch Enh Mode 8Vgss 845pF 10.4nC
Parameter Name | Attribute value |
Product Category | MOSFET |
Manufacturer | Diodes |
RoHS | Details |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | TSOT-26-6 |
Number of Channels | 1 Channel |
Transistor Polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 20 V |
Id - Continuous Drain Current | - 4.2 A |
Rds On - Drain-Source Resistance | 80 mOhms |
Vgs th - Gate-Source Threshold Voltage | - 0.9 V |
Vgs - Gate-Source Voltage | 8 V |
Qg - Gate Charge | 10.4 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Channel Mode | Enhancement |
Packaging | MouseReel |
Packaging | Cut Tape |
Packaging | Reel |
Fall Time | 21.8 ns |
Pd - Power Dissipation | 1.7 W |
Rise Time | 13.4 ns |
Factory Pack Quantity | 3000 |
Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 51.5 ns |
Typical Turn-On Delay Time | 6.5 ns |